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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 6/2020

17.02.2020

Enhancement of thermoelectric performances of BiCuSeO through Y doping and grain refining

verfasst von: Bo Feng, Guangqiang Li, Xiaoming Hu, Peihai Liu, Rusong Li, Yanglin Zhang, Yawei Li, Zhu He, Xi’an Fan

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2020

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Abstract

Thermoelectric properties of BiCuSeO oxyselenide ceramics were improved combining Y doping and grain refinement. Bi1−xYxCuSeO (x = 0, 0.02, 0.04, 0.06, 0.08, 0.10) (called as BYCSO below) samples were prepared by mechanical alloying and resistance pressing sintering (RPS). The testing results indicate that Y doping can increase the carrier concentration and electrical conductivity, increase the thermal conductivity. On the basis of Y doping, grain refinement by increasing ball milling strength was indicated to increase the concentration of Cu vacancies, which enhanced the electrical conductivity and power factor, and reduce the thermal conductivity. Finally, the ZT value is increased to 0.93, which is 98% higher than that of the pure sample.
Vorheriger Artikel Effect of doping Ni nanoparticles on microstructure evolution and shear behavior of Sn–3.0Ag–0.5Cu(SAC305)/Cu–2.0Be solder joints during reflowing
Nächster Artikel Enhanced thermoelectric properties of n-type Bi2Te2.7Se0.3 for power generation

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Metadaten
Titel
Enhancement of thermoelectric performances of BiCuSeO through Y doping and grain refining
verfasst von
Bo Feng
Guangqiang Li
Xiaoming Hu
Peihai Liu
Rusong Li
Yanglin Zhang
Yawei Li
Zhu He
Xi’an Fan
Publikationsdatum
17.02.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 6/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03056-9

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