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Erschienen in: Journal of Electronic Testing 1/2017

29.01.2017

Fast and Automated Electromigration Analysis for CMOS RF PA Design

verfasst von: Junjie Gu, Haipeng Fu, Weicong Na, Qijun Zhang, Jianguo Ma

Erschienen in: Journal of Electronic Testing | Ausgabe 1/2017

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Abstract

This paper presents fast and automated electromigration (EM) reliability modeling by using automated modeling generation (AMG) algorithm. The AMG converts human based EM modeling into an automated modeling and simulation process with the help of ANSYS parametric design language (APDL) program. For automating the neural model training process, training-driven adaptive sampling is applied to integrate data generation, data distributions determination, model structure adaptation, training and testing into a unified framework. Fully automated reliability model construction and simulation is achieved for the first time. This method effectively shortens the period of EM modeling by using dynamic sampling method. Furthermore, the heat generation from active devices has been considered to describe the heat effect on the interconnect reliability. Through the proposed technique, the allowable sizes, temperature and output power of a CMOS radio frequency power amplifier (RF PA) are derived to give reliability criteria for PA designer.

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Literatur
1.
Zurück zum Zitat Christou A (1993) Electromigration and electronic device degradation. Wiley, New York Christou A (1993) Electromigration and electronic device degradation. Wiley, New York
2.
Zurück zum Zitat Dalleau D, Zaage KW (2001) Three-dimensional voids simulation in chip metallization structures: a contribution to reliability evaluation. Microelectron Reliab 41(9/10):1625–1630CrossRef Dalleau D, Zaage KW (2001) Three-dimensional voids simulation in chip metallization structures: a contribution to reliability evaluation. Microelectron Reliab 41(9/10):1625–1630CrossRef
3.
Zurück zum Zitat Devabhaktuni VK, Yagoub MCE, Zhang QJ (2001) A robust algorithm for automatic development of neural-network models for microwave applications. IEEE Transactions on Microwave Theory and Techniques 49(12):2282–2291CrossRef Devabhaktuni VK, Yagoub MCE, Zhang QJ (2001) A robust algorithm for automatic development of neural-network models for microwave applications. IEEE Transactions on Microwave Theory and Techniques 49(12):2282–2291CrossRef
4.
Zurück zum Zitat He FF, Tan CM (2012) Electromigration reliability of interconnections in RF low noise amplifier circuit. Microelectron Reliab 52(2):446–454CrossRef He FF, Tan CM (2012) Electromigration reliability of interconnections in RF low noise amplifier circuit. Microelectron Reliab 52(2):446–454CrossRef
5.
Zurück zum Zitat Kabir H, Zhang L, Yu M, Aaen PH, Wood J, Zhang QJ (2010) Smart modeling of microwave devices. IEEE Microw Mag 11(3):105–118CrossRef Kabir H, Zhang L, Yu M, Aaen PH, Wood J, Zhang QJ (2010) Smart modeling of microwave devices. IEEE Microw Mag 11(3):105–118CrossRef
6.
Zurück zum Zitat Kim J, Yoon Y, Kim H, An KH, Kim W, Kim HW, Lee CH, Kornegay KT (2011) A linear multi-mode CMOS power amplifier with discrete resizing and concurrent power combining structure. IEEE J Solid State Circuits 46(5):1034–1048CrossRef Kim J, Yoon Y, Kim H, An KH, Kim W, Kim HW, Lee CH, Kornegay KT (2011) A linear multi-mode CMOS power amplifier with discrete resizing and concurrent power combining structure. IEEE J Solid State Circuits 46(5):1034–1048CrossRef
7.
Zurück zum Zitat Lee O, An KH, Kim H, Lee DH, Han J, Yang KS, Lee CH, Kim H, Laskar J (2010) Analysis and design of fully integrated high-power parallel-circuit class-E CMOS power amplifiers. IEEE Transactions on Circuits and Systems I: Regular Papers 57(3):725–734MathSciNetCrossRef Lee O, An KH, Kim H, Lee DH, Han J, Yang KS, Lee CH, Kim H, Laskar J (2010) Analysis and design of fully integrated high-power parallel-circuit class-E CMOS power amplifiers. IEEE Transactions on Circuits and Systems I: Regular Papers 57(3):725–734MathSciNetCrossRef
8.
Zurück zum Zitat Na WC, Zhang QJ (2014) Automated knowledge-based neural network modeling for microwave applications. IEEE Microwave and Wireless Components Letters 24(7):499–501CrossRef Na WC, Zhang QJ (2014) Automated knowledge-based neural network modeling for microwave applications. IEEE Microwave and Wireless Components Letters 24(7):499–501CrossRef
9.
Zurück zum Zitat Rayas-Sanchez JE (2004) EM-based optimization of microwave circuits using artificial neural networks: the state-of-the-art. IEEE Transactions on Microwave Theory and Techniques 52(1):420–435CrossRef Rayas-Sanchez JE (2004) EM-based optimization of microwave circuits using artificial neural networks: the state-of-the-art. IEEE Transactions on Microwave Theory and Techniques 52(1):420–435CrossRef
10.
Zurück zum Zitat RGdman-White W, Lek MSL, Tenbroek BM, Uren MJ, Bunyan RTJ (1993) Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements. Electron Lett 29(13):1180–1181CrossRef RGdman-White W, Lek MSL, Tenbroek BM, Uren MJ, Bunyan RTJ (1993) Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements. Electron Lett 29(13):1180–1181CrossRef
11.
Zurück zum Zitat Ruberto M, Degani O, Wail S, Tendler A, Fridman A, Goltman G (2008) A reliability-aware RF power amplifier design for CMOS radio chip integration, in IEEE International Reliability Physics Symposium 536–540 Ruberto M, Degani O, Wail S, Tendler A, Fridman A, Goltman G (2008) A reliability-aware RF power amplifier design for CMOS radio chip integration, in IEEE International Reliability Physics Symposium 536–540
12.
Zurück zum Zitat Tan CM, He FF (2009) 3D circuit model for 3D IC reliability study, in10th international conference on thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems. 7 Tan CM, He FF (2009) 3D circuit model for 3D IC reliability study, in10th international conference on thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems. 7
13.
Zurück zum Zitat Tan CM, Roy A (2007) Electromigration in ULSI interconnects. Materials Science and Engineering - A Review Journal (Elsevier) R58(1–2):1–75 Tan CM, Roy A (2007) Electromigration in ULSI interconnects. Materials Science and Engineering - A Review Journal (Elsevier) R58(1–2):1–75
14.
Zurück zum Zitat Tan CM, Zhang G, Gan ZH (2004) Dynamic study of the physical processes in the intrinsic line electromigration deep submicron copper and aluminum interconnects. IEEE Trans Device Mater Reliab 4(3):450–456CrossRef Tan CM, Zhang G, Gan ZH (2004) Dynamic study of the physical processes in the intrinsic line electromigration deep submicron copper and aluminum interconnects. IEEE Trans Device Mater Reliab 4(3):450–456CrossRef
15.
Zurück zum Zitat Tian YZ, He FF, Zhang QJ, Tan CM, Ma JG (2014) Rapid ULSI interconnect reliability analysis using neural networks. IEEE Trans Device Mater Reliab 14(1):400–407CrossRef Tian YZ, He FF, Zhang QJ, Tan CM, Ma JG (2014) Rapid ULSI interconnect reliability analysis using neural networks. IEEE Trans Device Mater Reliab 14(1):400–407CrossRef
Metadaten
Titel
Fast and Automated Electromigration Analysis for CMOS RF PA Design
verfasst von
Junjie Gu
Haipeng Fu
Weicong Na
Qijun Zhang
Jianguo Ma
Publikationsdatum
29.01.2017
Verlag
Springer US
Erschienen in
Journal of Electronic Testing / Ausgabe 1/2017
Print ISSN: 0923-8174
Elektronische ISSN: 1573-0727
DOI
https://doi.org/10.1007/s10836-016-5639-4

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