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Microsystem Technologies
Erschienen in: Microsystem Technologies 5/2018

18.01.2018 | Technical Paper

Fin shape influence on analog and RF performance of junctionless accumulation-mode bulk FinFETs

verfasst von: Kalyan Biswas, Angsuman Sarkar, Chandan Kumar Sarkar

Erschienen in: Microsystem Technologies | Ausgabe 5/2018

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Abstract

The non-planar 3D structure of multi-gate FinFETs makes them able to be scaled down to 20 nm and beyond and also have greater performance. But any variation of the fin cross-sectional shape has an impact on the device performance. In this paper, the impact of various fin cross-sectional shape on junctionless accumulation mode bulk FinFETs with thin fins and short channel length has been evaluated. Different important device performance parameters such as ON-current (ION), OFF current (IOFF), ratio of ON/OFF current, Threshold voltage (Vth), Subthreshold swing (SS), drain-induced barrier lowering (DIBL), transconductance (gm), transconductance generation factor (gm/Ids), cut-off frequency (fT), and maximum oscillation frequency (fmax) is evaluated for different fin shapes and analyzed. From the analysis, it is understood that shape of the fin cross-section has substantial impact on performance of the device. Improvement in SCEs was noticed in terms of ~ 25% reduction of DIBL and ~ 10% reduction in SS for the device with reduced fin top width. On the other hand, reduced fin top width degrades the RF performance as maximum frequency of oscillation decrease by ~ 10%. An optimal fin structure for the junctionless bulk FinFET is also obtained to have better SCEs and reasonable Analog/RF applications.
Vorheriger Artikel Nanoscale mass nanosensor based on the vibration analysis of embedded magneto-electro-elastic nanoplate made of FGMs via nonlocal Mindlin plate theory
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Metadaten
Titel
Fin shape influence on analog and RF performance of junctionless accumulation-mode bulk FinFETs
verfasst von
Kalyan Biswas
Angsuman Sarkar
Chandan Kumar Sarkar
Publikationsdatum
18.01.2018
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 5/2018
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-018-3729-1

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