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Erschienen in:
30.05.2017
Growth and scintillation properties of Eu and Ce doped LiSrI3 single crystals
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 17/2017
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Abstract
In this study, Eu and Ce doped LiSrI3 single crystals were explored and the scintillation performance was reported at the first time. Eu and Ce doped LiSrI3 single crystals were grown by the Bridgman–Stockbarger method in a quartz ampoule with 3 mm inner diameter. Growth rate was 0.06 mm/min. Circular samples with 1 mm thickness were obtained from the grown crystal. The grown Eu doped LiSrI3 crystal demonstrated Eu2+ 4f–5d emission peak at 420 nm under alpha-ray excitation. In the case of Ce doped one, double emission peaks at 360 and 400 nm were observed. The light yield of the Eu doped LiSrI3 was around 35,000 photon/MeV for 662 keV gamma-ray and 24,000 photon/5.5 MeV for alpha-ray. Energy resolution of the Eu doped LiSrI3 was 5.2%@662 keV. Scintillation decay time of the grown Ce and Eu doped LiSrI3 under 662 keV gamma-ray was 23.8 ns (50%) 212 ns (50%) and 545 ns 100%, respectively.