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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 10/2019

12.04.2019

High-performance thin film transistors based on amorphous Al–N co-doped InZnO films prepared by RF magnetron sputtering

verfasst von: Yaobin Ma, Jinbao Su, Ran Li, Longjie Tian, Qi Wang, Xiqing Zhang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2019

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Abstract

In this study, we developed bottom-gate thin film transistors (TFTs) using a novel amorphous Al–N co-doped InZnO thin film as an active layer and determined their electrical characteristics. The film achieved high transmittance in the visible region, and X-ray diffraction pattern confirmed the thin film’s amorphous nature. Scanning electron microscopy and atom force microscopy images revealed a thin film with a smooth and uniform surface and a low root mean square roughness. X-ray photoelectron spectroscopy confirmed that oxygen vacancies in the thin film increased after annealing. Moreover, the obtained TFT showed a saturation mobility of 31.8 cm2 V−1 s−1, a threshold voltage of 7.0 V, a subthreshold swing of 0.6 V/decade, and an on/off current ratio of 9.7 × 108.
Vorheriger Artikel Enhancement of photoelectric conversion efficiency with sulfur-doped g-C3N4/TiO2 nanoparticles composites in dye-sensitized solar cells
Nächster Artikel Facile synthesis of N-doped activated carbon derived from cotton and CuCo2O4 nanoneedle arrays electrodes for all-solid-state asymmetric supercapacitor

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Metadaten
Titel
High-performance thin film transistors based on amorphous Al–N co-doped InZnO films prepared by RF magnetron sputtering
verfasst von
Yaobin Ma
Jinbao Su
Ran Li
Longjie Tian
Qi Wang
Xiqing Zhang
Publikationsdatum
12.04.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01324-x

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