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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 3/2018

20.06.2018

Incorporation of hafnium and platinum metal in vertical power MOSFETs

verfasst von: Onika Parmar, Alok Naugarhiya

Erschienen in: Journal of Computational Electronics | Ausgabe 3/2018

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Abstract

A novel, vertical single-diffused metal–oxide–semiconductor (VSDMOS) structure is proposed by applying workfunction engineering to a vertical power metal–oxide–semiconductor field-effect transistor (MOSFET) with source and drain regions formed using the charge plasma concept. Electron and hole plasma was induced by employing hafnium and platinum metal. Furthermore, the electrical characteristics of the proposed VSDMOS were compared with those of conventional vertical double-diffused metal–oxide–semiconductor devices, revealing that the proposed VSDMOS exhibits a 14 % increase in current driving capability, with improved breakdown voltage.
Vorheriger Artikel Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs
Nächster Artikel Avalanche breakdown evolution under hot-carrier stress: a new microscopic simulation approach applied to a vertical power MOSFET

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Metadaten
Titel
Incorporation of hafnium and platinum metal in vertical power MOSFETs
verfasst von
Onika Parmar
Alok Naugarhiya
Publikationsdatum
20.06.2018
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 3/2018
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-018-1193-x

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