Influence of Al₂O₃ nanoparticles incorporation on the dielectric properties of solution processed PVA films for organic field effect transistor applications

We report, the influence of Al₂O₃ nanoparticles (NP) incorporation on the dielectric properties of solution processed polyvinylalcohol (PVA) films for organic field effect transistor applications. It was observed typical p-type organic field effect transistors. Devices processed using employing PVA films blended with 70 wt% of Al₂O₃ NP as gate dielectric layers demonstrated higher field effect mobility, better saturation behavior and reduced hysteresis phenomenon compared to the devices based on pure PVA films. Al₂O₃ NP:PVA blends based dielectric films with 0, 3, 5, 10, 20, 50 and 70 wt% concentrations of Al₂O₃ NP compared to the weight of PVA were prepared. Dielectric parameters such as dielectric constant and dielectric strength of the Al₂O₃ NP:PVA films were analyzed. It was found that real dielectric constant as well as dielectric strength of the films increase with increase of Al₂O₃ NP concentration. Cole–Cole plots of the films demonstrated depressed semi-circles which points non-Debye type behavior. We presume that the devices being investigated with promising results, may be utilized for some industrial applications such as large area sensor arrays in future.