Influence of temperature on MWCNT bundle, SWCNT bundle and copper interconnects for nanoscaled technology nodes

This paper presents the comparative analysis of temperature dependent performance of Multi-walled carbon nanotubes (MWCNT), Single-walled carbon nanotube (SWCNT) and copper interconnects for nanoscaled technology nodes. The temperature dependent impedance circuit model is proposed for MWCNT bundle interconnects. The proposed model for MWCNT bundle shows the various electron–phonon scattering mechanisms dependency as a function of temperature. The performance in terms of propagation delay, power dissipation and power delay product for MWCNT bundle interconnects is simulated on the basis of temperature dependent electrical parameters for global interconnects at three different technology nodes viz. 32, 22 and 16 nm for temperature range 200 to 450 K. A similar analysis is performed for SWCNT bundle and copper interconnects and results are compared with the MWCNT bundle interconnects. The comparative results revealed that the performance of MWCNT bundle interconnects is better than the performance of SWCNT bundle and copper interconnects at different temperature ranging from 200 to 450 K for 32, 22 and 16 nm technology nodes at global interconnects.