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Journal of Materials Science: Materials in Electronics

Erschienen in:

09.04.2021

Investigations of some physical properties of ALD growth ZnO films: effect of crystal orientation on photocatalytic activity

verfasst von: Meryem Polat Gonullu, Muge Soyleyici Cergel, Halil Ibrahim Efkere, Hakan Ates

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2021

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Abstract

ZnO films have great application potentials from optoelectronic devices to photocatalysis. Detailed film properties and relations between photocatalytic activities of annealed ZnO films grown on glass and corning glass substrates by Atomic Layer Deposition Technique (ALD) were reported in the current study. The structural evolutions were investigated by X-ray diffraction. Results showed that crystal orientations are strongly dependent on substrate materials. The optical band gap values of all films change between 3.26 and 3.24 eV with annealing. Lower electrical resistivity values were obtained for as-grown films. The morphological properties of the films were investigated by atomic force microscopy. In addition, the highest value of photoactivity was determined for ZnO films grown on corning glass substrate and annealed at 600 °C with a value of 53%. Relations between crystal orientations and photocatalytic activities showed that the crystal orientations, crystallite sizes, peak intensities, and dislocation density values are highly effective on photoactivities of ZnO films.

Vorheriger Artikel Bio-inspired green synthesis of reclaimable ZnO nanoclusters using Parkia speciosa Hassk pods and its potential photocatalytic removal of water-borne pollutant and antioxidant activities

Nächster Artikel Enhanced performance of OLED based on molecular orientation of emission layer by optimized substrate temperature

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Titel: Investigations of some physical properties of ALD growth ZnO films: effect of crystal orientation on photocatalytic activity
verfasst von: Meryem Polat Gonullu
Muge Soyleyici Cergel
Halil Ibrahim Efkere
Hakan Ates
Publikationsdatum: 09.04.2021
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 9/2021
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-021-05835-4

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