Ausgabe 5-6/1999
Inhalt (23 Artikel)
Impact of high energy particle irradiation on the electrical performance of Si1−x Ge x epitaxial diodes
H. Ohyama, K. Hayama, T. Hakata, E. Simoen, C. Claeys, J. Poortmans, M. Caymax, Y. Takami, H. Sunaga
Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy
J. M. Bonar, J. Schiz, P. Ashburn
Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy
P. J. Mcnally, J. W. Curley, M. Bolt, A. Reader, T. Tuomi, R. Rantama¨ki, A. N. Danilewsky, I. DeWolf
Low-dose SIMOX wafers for LSIs fabricated with internal-thermal-oxidation (ITOX) process: electrical characterization
A. Matsumura, K. Kawamura, I. Hamaguchi, S. Takayama, T. Yano, Y. Nagatake
Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
S. Duen~as, R. Pela´ez, E. Casta´n, R. Pinacho, L. Quintanilla, J. Barbolla, I. Ma´rtil, E. Redondo, G. Gonza´lez-Di´az
Use of anodic tantalum pentoxide for high-density capacitor fabrication
S. Duen~as, E. Casta´n, J. Barbolla, R. R. Kola, P. A. Sullivan
Ion beam synthesis of compound nanoparticles in SiO2
A. Pe´rez-Rodri´guez, B. Garrido, C. Bonafos, M. Lo´pez, O. Gonza´lez-Varona, J. R. Monrante, J. Montserrat, R. Rodri´guez
Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma
M. J. Herna´ndez, M. Cervera, J. Garrido, J. Marti´nez, J. Piqueras
Mechanism of GaAs transport by water reaction application to the growth of thick epitaxial layers
M. Hammadi, J. C. Bourgoin, H. Samic
Radiation damage of In0.53Ga0.47As photodiodes by high energy particles
H. Ohyam, T. Kudou, E. Simoen, C. Claeys, Y. Takami, H. Sunaga
Electrical carrier activation in Zn+ implanted and low-power pulsed-laser annealed InP in nitrogen atmosphere
C. Pizzuto, G. Zollo, G. Vitali
Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions
L. Quintanilla, S. Duen~as, E. Casta´n, R. Pinacho, R. Pela´ez, J. Barbolla
Study of the kink effect in AlInAs/GaInAs/InP composite channel HFETs
B. Georgescu, A. Souifi, G. Guillot, M. A. Py, G. Post
Electrical characterization of Si+ and Si+/P+ implanted N+P+In0.53Ga0.47As junctions
M. N. Blanco, E. Redondo, C. Leo´n, J. Santamaria, G. Gonza´lez-Diaz
Recent developments in the design and fabrication of visible photonic band gap waveguide devices
M. D. B. Charlton, G. J. Parker, M. E. Zoorob
Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells
I. M. Dharmadasa, A. P. Samantilleke, J. Young, M. H. Boyle, R. Bacewicz, A. Wolska
Tunable microcavity based on InP/air Bragg mirrors
R. LE Dantec, T. Benyattou, G. Guillot, A. Spisser, J. L. Leclercq, P. Viktorovitch, D. Rondi, R. Blondeau
High dielectric AlN/Al2O3 composite powder using a plasma spray approach for microelectronics application
F. Y. C. Boey, L. Sun, X. Song, K. A. Khor
Effects of strain rate and temperature on the stress–strain response of solder alloys
W. J. Plumbridge, C. R. Gagg