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Erschienen in: Microsystem Technologies 3/2012

01.03.2012 | Technical Paper

A three-axis SOI accelerometer sensing with both in-plane and vertical comb electrodes

verfasst von: Jin Xie, Rahul Agarwal, Youhe Liu, Julius Minglin Tsai

Erschienen in: Microsystem Technologies | Ausgabe 3/2012

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Abstract

A three-axis capacitive accelerometer based on silicon-on-insulator is designed and fabricated. In the accelerometer, totally eight groups of capacitors are compactly arranged around an octagonal proof mass. The four groups of capacitors along orthogonal direction with in-plane comb electrodes detect XY acceleration, while the other four groups of capacitors along diagonal direction with vertical comb electrodes detect Z acceleration. Measurements of in-plane and vertical motion by the respective in-plane and vertical comb electrodes enable direct detection for all the three axes with differential capacitive sensing scheme. For the fabricated accelerometer in the size of 4 × 4 mm2, the capacitance sensitivities of in-plane and out-of-plane accelerometers are 145.3 and 9.1 fF/g, respectively.

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Metadaten
Titel
A three-axis SOI accelerometer sensing with both in-plane and vertical comb electrodes
verfasst von
Jin Xie
Rahul Agarwal
Youhe Liu
Julius Minglin Tsai
Publikationsdatum
01.03.2012
Verlag
Springer-Verlag
Erschienen in
Microsystem Technologies / Ausgabe 3/2012
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-011-1393-9

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