Design and performance analysis of uniform meander structured RF MEMS capacitive shunt switch along with perforations

This paper presents design and simulation of uniform structured RF MEMS capacitive shunt switch using FEM tool and HFSS software. The switches with different shaped meanders and perforations which result in less spring constant, less pull-in voltage, high isolation loss, high switching speed and low insertion loss have been designed. From the simulated results it is observed that the rectangular perforations gives the better results, when compared with square and cylindrical shaped perforations. Comparative study is done for zigzag, plus and three square shaped meander along with rectangular perforations on each structure. When the gap between the dielectric and the movable beam is 0.8 µm, the up state capacitance for HfO₂ is 4.06fF and for Si₃N₄ is 3.80fF. The downstate capacitance for HfO₂, Si₃N₄ is 49fF, 26.9fF respectively. The capacitance ratio is 120.6. Poly-tetra-fluoro-ethylene material is given for the movable beam whose young’s modulus is 0.4 GPa and the spring constant is calculated theoretically for each structure; by using this the pull in voltage and the settling time are calculated. Step switch with three square Meander has switching time 10.25 µs, pull in voltage as 2.45 V. By using HFSS 3-D electromagnetic model we observed the return loss (S₁₁) is less than −60 dB, the insertion loss is less than −0.07 dB in the range of 1–40 GHz frequency and switch isolation (S₂₁) is −61 dB at 28 GHz frequency.