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Journal of Computational Electronics

Erschienen in:

01.06.2014

Continuity equation based nonquasi-static charge model for independent double gate MOSFET

verfasst von: Neha Sharan, Santanu Mahapatra

Erschienen in: Journal of Computational Electronics | Ausgabe 2/2014

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Abstract

Using the numerical device simulation we show that the relationship between the surface potentials along the channel in any double gate (DG) MOSFET remains invariant in QS (quasistatic) and NQS (nonquasi-static) condition for the same terminal voltages. This concept along with the recently proposed ‘piecewise charge linearization’ technique is then used to develop the intrinsic NQS charge model for a Independent DG (IDG) MOSFET by solving the governing continuity equation. It is also demonstrated that unlike the usual MOSFET transcapacitances, the inter-gate transcapacitance of a IDG-MOSFET initially increases with the frequency and then saturates, which might find novel analog circuit application. The proposed NQS model shows good agreement with numerical device simulations and appears to be useful for efficient circuit simulation.

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Masahara, M., Liu, Y., Sakamoto, K., Endo, K., Matsukawa, T., Ishii, K., Sekigawa, T., Yamauchi, H., Tanoue, H., Kanemaru, S., Koike, H., Suzuki, E.: Demonstration, analysis, and device design considerations for independent DG MOSFETs. IEEE Trans. Electron Devices 52(9), 2046–2053 (2005) CrossRef

Shrivatsava, M., Baghini, M.S., Sachid, A.B., Sharma, D.K., Rao, V.R.: A novel and robust approach for common mode feedback using IDDG FinFET. IEEE Trans. Electron Devices 55(11), 3274–3282 (2008) CrossRef

Zhang, W., Fossum, J.G., Mathew, L., Du, Y.: Physical insights regarding design and performance of independent-gate FETs. IEEE Trans. Electron Devices 52(10), 2198–2206 (2005) CrossRef

Khandelwal, S., Chauhan, Y.S., Lu, D.D., Venugopalan, S., Karim, M.A.U., Sachid, A.B., Nguyen, B.Y., Rozeau, O., Faymot, O., Niknejad, A.M., Hu, C.C.: BSIM-IMG: a compact model for ultra-thin body SOI MOSFETs with back gate control. IEEE Trans. Electron Devices 59(8), 2019–2026 (2012) CrossRef

Faynot, O., Andrieu, F., Weber, O., Fenouillet-Beranger, C., Perreau, P., Mazurier, J., Benoist, T., Rozeau, O., Poiroux, T., Vinet, M., Grenouillet, L., Noel, J.-P., Posseme, N., Barnola, S., Martin, F., Lapeyre, C., Casse, M., Garros, X., Jaud, M.-A., Thomas, O., Cebarario, G., Tosti, L., Brevard, L., Tabone, C., Gaud, P., Barraud, S., Ernst, T., Delonibus, S.: Planar fully depleted SOI technology: A powerful architecture for 20 nm and beyond. In: IEDM Tech. Dig., San Francisco, CA, Dec. 6–8, pp. 3.2.1–3.2.4 (2011)

Dessai, G., Wu, W., Gildenblat, G.: Compact charge model for independent gate asymmetric DGFET. IEEE Trans. Electron Devices 59(8), 2019–2026 (2012) CrossRef

Jandhyala, S., Abraham, A., Anghel, C., Mahapatra, S.: Piecewise linearization technique for compact charge modelling of independent DG MOSFET. IEEE Trans. Electron Devices 59(7), 1974–1979 (2012) CrossRef

Jandhyala, S., Abraham, A., Anghel, C., Mahapatra, S.: Errata to piecewise linearization technique for compact charge modelling of independent DG MOSFET. IEEE Trans. Electron Devices 60(1), 518 (2013) CrossRef

Tsividis, Y., McAndrew, C.: Operation and Modelling of the MOS Transistor, 3rd edn. Oxford University Press, Oxford (2011)

10.

Wang, H., Chen, T.L., Gildenblat, G.: Quasi-static and nonquasi-static compact MOSFET models based on symmetric linearization of the bulk and inversion charges. IEEE Trans. Electron Devices 50(11), 2262–2272 (2003) CrossRef

11.

Liu, W., Hu, C.: BSIM4 and MOSFET Modeling for IC Simulation. World Scientific, Singapore (2011)

12.

Miura-Mattausch, M., Mattausch, H.J., Ezaki, T.: The Physics and Modeling of MOSFETs: Surface-Potential Model HiSim. World Scientific, Singapore (2008)

13.

Zhu, Z., Gildenblat, G., McAndrew, C.C., Lim, I.S.: Accurate RTA-based nonquasi-static MOSFET model for RF and mixed-signal simulations. IEEE Trans. Electron Devices 59(5), 1236–1244 (2012) CrossRef

14.

ATLAS: Device simulation framework, version 5.18.3.R. Silvaco International USA 2012. Users’ Manual [online]. Available: www.silvaco.com

15.

Sarkar, S., Roy, A.S., Mahapatra, S.: Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET. Solid-State Electron. 54(11), 1421–1429 (2010) CrossRef

16.

Sharan, N., Mahapatra, S.: Non-quasi-static charge model for common double gate MOSFET adapted to gate oxide thickness asymmetry. IEEE Trans. Electron Devices 60(7) (2013)

17.

Jandhyala, S., Kashyap, R., Anghel, C., Mahapatra, S.: A simple charge model for symmetric double-gate MOSFETs adapted to gate-oxide-thickness asymmetry. IEEE Trans. Electron Devices 59(4), 1002–1007 (2012) CrossRef

18.

Sahoo, A., Thakur, P.K., Mahapatra, S.: A computationally efficient generalized Poisson solution for independent double gate transistors. IEEE Trans. Electron Devices 57(3), 632–636 (2010) CrossRef

19.

Wang, H., Li, X., Wu, W., Gildenblat, G., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M.: A unified nonquasi-static MOSFET model for large-signal and small-signal simulations. IEEE Trans. Electron Devices 53(9), 2035–2043 (2006) CrossRef

20.

MATLAB: the language of technical computing 7.11.0 (R2010b). MathWorks. Available: www.mathworks.in/products/matlab/

Titel: Continuity equation based nonquasi-static charge model for independent double gate MOSFET
verfasst von: Neha Sharan
Santanu Mahapatra
Publikationsdatum: 01.06.2014
Verlag: Springer US
Erschienen in: Journal of Computational Electronics / Ausgabe 2/2014
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-013-0540-1

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