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Journal of Materials Science: Materials in Electronics

Erschienen in:

01.04.2010

Effect of Mn doping on the dielectric properties of BaZr_0.2Ti_0.8O₃ ceramics

verfasst von: Wei Cai, Chunlin Fu, Jiacheng Gao, Xiaoling Deng

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 4/2010

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Abstract

Pure and Mn-doped BaZr_0.2Ti_0.8O₃ ceramics are prepared via the conventional solid state reaction method. The microstructures, dielectric properties, and diffuse transition of Mn-doped BaZr_0.2Ti_0.8O₃ ceramics have been investigated. The results indicate that manganese ions enter the unit cell maintaining the perovskite structure of solid solution. The addition of manganese leads to the decrease of the Curie temperature. The dielectric loss of the Mn-doped BZT ceramics is lower than that of pure BZT ceramics, and decreases as Mn content increases. The diffuseness of the phase transition of Mn-doped BZT ceramics decreases with the increase of Mn content. There is no obvious frequency dispersion around the dielectric constant peaks for Mn-doped BZT ceramics. The coercive electric field and the remanent polarization decreases as Mn content increases.

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Titel: Effect of Mn doping on the dielectric properties of BaZr0.2Ti0.8O3 ceramics
verfasst von: Wei Cai
Chunlin Fu
Jiacheng Gao
Xiaoling Deng
Publikationsdatum: 01.04.2010
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 4/2010
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-009-9913-4

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