Anzeige
Erschienen in:
01.09.2013
CuInGaSe2 crystals synthesis by selenization of Cu–In–Ga alloy in H2Se atmosphere for solar cell applications
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2013
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Copper indium gallium diselenide (CuInGaSe2) crystals were synthesized using two step growth strategy. A facile solution route was employed as a primary step to synthesize Cu–In–Ga (CIG) metallic precursor using ethylenediamine as a solvent. Thin films of CIG metallic precursor have been deposited using spray deposition technique on to molybdenum coated soda lime glass substrate under inert atmosphere. The subsequent step involved the selenization of metallic precursor thin films in H2Se atmosphere at 450 °C for 90 min followed by annealing in Ar thus yielding solar cell applicable dense CuInGaSe2 crystals. The surface morphology, phase structure and composition of the deposited films were analyzed by field emission scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectroscopy and electrical resistivity measurement respectively. The results revealed that annealed films were crystalline in nature exhibiting homogeneous single chalcopyrite phase.