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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 11/2018

24.03.2018

Synthesis and characterization of Zn-doped Mn3O4 thin films using successive ionic layer adsorption and reaction technique: Its structural, optical and wettability properties

verfasst von: Ozkan Bayram, Mehmet Emrah Ertargin, Erdal Igman, Harun Guney, Onder Simsek

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2018

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Abstract

In this study, it is aimed to obtain Zn doped Mn3O4 (manganese oxide) nanostructured thin films on the soda lime glass substrates by successive ionic layer adsorption and reaction technique. The tetragonal crystal structure of the all thin films was detected using XRD spectroscopy. The average crystallite size of undoped Mn3O4 thin films was calculated to be 29 nm and for Zn-doped thin films, this value decreased to 23 nm with increasing Zn concentration. Characteristic peaks for thin films were also confirmed by RAMAN spectroscopy. The morphological structures of zinc-doped manganese oxide nano-sheets thin films were revealed by SEM. Using UV–Vis spectroscopy, it was found that the optical band gap of Mn3O4 thin films decreased from 2.05 to 1.73 eV with Zn doping. It has also been understood from the wettability analyzes of thin films that all thin films have a hydrophilic character. From all these analyzes, it is thought that the Zn doped Mn3O4 thin films have the potential to be used in supercapacitor applications.
Vorheriger Artikel A composite of epoxy resin/copper(II) acetylacetonae as catalyst of copper addition on insulated substrate
Nächster Artikel Properties of sol gel synthesized ZnO nanoparticles

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Metadaten
Titel
Synthesis and characterization of Zn-doped Mn3O4 thin films using successive ionic layer adsorption and reaction technique: Its structural, optical and wettability properties
verfasst von
Ozkan Bayram
Mehmet Emrah Ertargin
Erdal Igman
Harun Guney
Onder Simsek
Publikationsdatum
24.03.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-8980-9

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