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Erschienen in: Microsystem Technologies 8/2015

01.08.2015 | Technical Paper

Room temperature Si–Ti thermopile THz sensor

verfasst von: Sofiane Ben Mbarek, Sébastien Euphrasie, Thomas Baron, Laurent Thiery, Pascal Vairac, Danick Briand, Jean-Paul Guillet, Laurent Chusseau

Erschienen in: Microsystem Technologies | Ausgabe 8/2015

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Abstract

In this paper, we present the conception, fabrication and characterization of a thermopile designed to detect terahertz electromagnetic fields at room temperature. The thermopile is made of four doped silicon/titanium thermocouples. The absorber consists of a metallic grid made of titanium, deposited at the same time as the metal part of the thermocouples. The design of the grid is based on a theoretical multilayer model using equivalent resistivity and taking into account small diffraction effects. The grid is deposited on a 2.4 mm × 2.4 mm silicon nitride square membrane. The time constant of the sensor is measured at 0.3 THz to be 10 ms, which is consistent with finite elements simulations. The responsivity is evaluated at 4.8 μV/(W m−2). Due to a large impedance, which leads to a large Johnson noise, the noise equivalent power is 1.5 × 10−6 W Hz−1/2.

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Metadaten
Titel
Room temperature Si–Ti thermopile THz sensor
verfasst von
Sofiane Ben Mbarek
Sébastien Euphrasie
Thomas Baron
Laurent Thiery
Pascal Vairac
Danick Briand
Jean-Paul Guillet
Laurent Chusseau
Publikationsdatum
01.08.2015
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 8/2015
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-014-2252-2

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