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Microsystem Technologies

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26.06.2018 | Technical Paper

Finite element simulation of one-port surface acoustic wave resonator with thick interdigital transducer for gas sensing

verfasst von: Vivek Lukose, Harshal B. Nemade

Erschienen in: Microsystem Technologies | Ausgabe 2/2019

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Abstract

The paper presents finite element simulation of a surface acoustic wave (SAW) one-port resonator with thick interdigital transducers (IDT) made of nickel metal for sensing dimethyl methylphosphonate (DMMP) gas by placing fluoroalcoholpolysiloxane (SXFA) sensing film in the space between thick IDT fingers. The absorption of DMMP gas changes density and thickness of SXFA film and affect the SAW propagation velocity, hence resonance frequency of the device. The change in resonance frequency is measured as sensor response. In this paper individual effects of change in density and thickness of SXFA film due to absorption of DMMP gas on sensor response are simulated. The results show that the change in thickness of the SXFA film placed in the space between thick IDT fingers of proposed device is dominant in sensor response and the sensitivity of the proposed device (2.1 kHz/mg/m³) is about 3.2 times greater than a conventional device using SXFA coated over the entire top surface of the device.

Vorheriger Artikel Ultrafast all-optical ALU operation using a soliton control within the cascaded InGaAsP/InP microring circuits

Nächster Artikel All-optical logic gates based on XPM effect under the PAM-ASK modulation in a symmetric dual NLDC

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Titel: Finite element simulation of one-port surface acoustic wave resonator with thick interdigital transducer for gas sensing
verfasst von: Vivek Lukose
Harshal B. Nemade
Publikationsdatum: 26.06.2018
Verlag: Springer Berlin Heidelberg
Erschienen in: Microsystem Technologies / Ausgabe 2/2019
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-018-4015-y

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