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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 3/2017

17.07.2017

Tunable electronic properties of multilayer phosphorene and its nanoribbons

verfasst von: S. Soleimanikahnoj, I. Knezevic

Erschienen in: Journal of Computational Electronics | Ausgabe 3/2017

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Abstract

We study the effects of a vertical electric field on the electronic band structure and transport in multilayer phosphorene and its nanoribbons. In phosphorene, at a critical value of the vertical electric field (\(E_\mathrm{c}\)), the band gap closes and the band structure undergoes a massive-to-massless Dirac fermion transition along the armchair direction. This transition is observable in quantum Hall measurements, as the power-law dependence of the Landau-level energy on the magnetic field B goes from \({\sim }(n+1/2)B\) below \(E_\mathrm{c}\), to \({\sim }[(n+1/2)B]^{2/3}\) at \(E_\mathrm{c}\), to \({\sim }[(n+1/2)B]^{1/2}\) above \(E_\mathrm{c}\). In multilayer phosphorene nanoribbons (PNRs), the vertical electric field can be employed to manipulate the midgap energy bands that are associated with edge states, thereby giving rise to new device functionalities. We propose a dual-edge-gate PNR structure that works as a quantum switch.
Vorheriger Artikel Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor
Nächster Artikel Size effect in graphene nano-islands: A Monte Carlo study

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Fußnoten
1
The condition for energy levels in a magnetic field B is \(S(E) = 2\pi (n+\frac{1}{2})eB\), where S(E) is the area of constant-energy surface in reciprocal space [56]. Since \(\rho (E) = \frac{\partial S(E)}{\partial E}\), the Landau levels are found to be \(E_n\sim [(n+1/2)B]^{2/3}\) for multilayer phosphorene at the critical electric field.
 
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Metadaten
Titel
Tunable electronic properties of multilayer phosphorene and its nanoribbons
verfasst von
S. Soleimanikahnoj
I. Knezevic
Publikationsdatum
17.07.2017
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 3/2017
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-017-1036-1

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