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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 3/2017

18.05.2017

Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor

verfasst von: Avik Chakraborty, Angsuman Sarkar

Erschienen in: Journal of Computational Electronics | Ausgabe 3/2017

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Abstract

An analytical model of dielectric-modulated junctionless gate-stack surrounding gate MOSFET for application as a biosensor is presented. An expression for the channel-center potential is obtained by solving the 2-D Poisson’s equation using a parabolic-potential approach. An analytical model for the threshold voltage is developed from the minimum channel-center potential to analyze the sensitivity of the biosensor. Moreover, the effects of the variation of the different device dimensional parameters on the sensitivity of the biosensor were investigated in order to study the dielectric modulation effects due to the permittivity changes by the biomolecules present within the nanogap cavity. The analytical model is verified and validated with the help of TCAD device simulations.
Vorheriger Artikel A systematic method for simulating total ionizing dose effects using the finite elements method
Nächster Artikel Tunable electronic properties of multilayer phosphorene and its nanoribbons

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Metadaten
Titel
Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor
verfasst von
Avik Chakraborty
Angsuman Sarkar
Publikationsdatum
18.05.2017
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 3/2017
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-017-0999-2

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