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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 3/2017

05.06.2017

2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET

verfasst von: Prashanth Kumar, Brinda Bhowmick

Erschienen in: Journal of Computational Electronics | Ausgabe 3/2017

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Abstract

A two-dimensional analytical model for the surface potential and threshold voltage of a dual work function Schottky barrier (SB) MOSFET is presented. The developed model considers the effects of the varying gate metal work function, gate and drain voltages, and different doping concentrations, gate dielectric permittivity, and silicon thickness. For solving the electrostatic potential of the SB-MOSFET by using Poisson’s equation with appropriate boundary conditions, parabolic approximation has been considered. The proposed device has also incorporated the effect of barrier height lowering at the metal/semiconductor contacts. The results of our modeled surface potential and the threshold voltage, match with technology computer aided design simulations.
Vorheriger Artikel Compact 2D threshold voltage modeling and performance analysis of ternary metal alloy work-function-engineered double-gate MOSFET
Nächster Artikel New technique to extend the vertical depletion region at SOI-LDMOSFETs

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Metadaten
Titel
2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET
verfasst von
Prashanth Kumar
Brinda Bhowmick
Publikationsdatum
05.06.2017
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 3/2017
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-017-1011-x

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