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Erschienen in:
01.12.2008
Initial process effects on the surface morphology and structural property of the AlN epilayers
Erschienen in: Journal of Materials Science: Materials in Electronics | Sonderheft 1/2008
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Abstract
Aluminum nitride (AlN) epilayers were directly grown on (0001)-oriented sapphire substrates by metal organic chemical vapor deposition (MOCVD). Different types of initial processes of Trimethylaluminum (TMA) preflow, ammonia (NH3) preflow, and TMA and NH3 pulsed flows were performed for the growth of the AlN epilayers. The surface morphology and the crystal quality were investigated on the basis of scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). According to the results of comparatively flat surface, narrower full width at half maximum of (0002) and (10−12) rocking curves, and lower dislocations at the AlN/sapphire interface, we conclude that the crystal quality of the AlN epilayers are significantly improved by using the pulsed flows of NH3 and TMA in the initial process.