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Erschienen in:
01.12.2009
Preparation and photoelectric properties of Ti doped ZnO thin films annealed in vacuum
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2009
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Abstract
In the present paper, Ti doped ZnO films with higher conductive properties were grown on room temperature glass substrates by radio frequency magnetron sputtering and followed by annealing in vacuum. The microstructures and surface figures of the films were investigated by X-ray diffraction and scanning electronic microscopy, and its optical and electrical properties were measured using a four-point probe technique and 756-type spectrophotometer at room temperature. The results show that the preferred growth orientation of the films is (002) orientation, and after annealing in vacuum at 400 °C for 3 h, the average transmittance reduces from 90 to 80%, and resistivity reduces from 4.53 × 10−2 to 8.78 × 10−4 Ω cm.