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Erschienen in: Journal of Materials Science: Materials in Electronics 10/2013

01.10.2013

Effects of BaNb2O6 addition on microstructure and dielectric properties of BaTiO3 ceramics

verfasst von: Pan Gao, Yongping Pu, Pin Li, Ting Wu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 10/2013

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Abstract

(1 − x)BaTiO3xBaNb2O6 [(1 − x)BT–xBN] ceramics with x = 0, 0.005, 0.008, 0.01, 0.02, 0.03 were prepared by a conventional solid-state reaction route. The effect of BN addition on phase composition, microstructure and dielectric properties of BT-based ceramics were investigated by X-ray diffraction, scanning electron microscope and impedance spectroscopy. The results showed that a systematic structure change from the ferroelectric tetragonal phase to pseudo-cubic phase was observed near x = 0.01 at room temperature. It resulted in a considerable change of density, grain size and dielectric properties of the samples when BN was introduced. Meanwhile, it also lowered the sintering temperature of the ceramics. The dielectric constant peak and the variation rate of capacitance at Curie temperature are markedly depressed and broaden with increasing BN content. Especially, the ceramics with x = 0.008 and x = 0.01 showed good dielectric properties over the measured temperature range. Optimal dielectric properties of ε = 3,851, tanδ = 0.7 % at room temperature and Δε/ε25 ≤ ±6.8 % (−55 to 125 °C) were obtained for the BT-based ceramics doped with 0.8 mol% BN, which was obviously superior to BaTiO3 and BaNb2O6 ceramic, and it met the requirements of EIA X7R specifications.

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Metadaten
Titel
Effects of BaNb2O6 addition on microstructure and dielectric properties of BaTiO3 ceramics
verfasst von
Pan Gao
Yongping Pu
Pin Li
Ting Wu
Publikationsdatum
01.10.2013
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 10/2013
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1347-3

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