Anzeige
Erschienen in:
03.04.2017
Selective boron diffusion without masking layer using boric acid for solar cell emitter formation
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 15/2017
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
In this article, we have used boric acid as a source to form the solar cell emitter in a selective way. Moreover, in order to optimize the process, the conditions of boron diffusion were investigated. It was found that for 5% boric acid in deionized (DI) water, the spinning speed of 3000 rpm for 15 s and dry-out process at 200 °C are the most appropriate conditions. Additionally, by using the boric acid source, a selective doping method was developed in this study. Therefore, we have demonstrated that it is possible to perform both light and heavy (under contacts) dopings on different areas of the wafer without any extra masking layer (e.g. silicon dioxide) and undergoing only one drive-in process.