Anzeige
Erschienen in:
2020 | OriginalPaper | Buchkapitel
3. Local Dielectric Constant Density Analysis of High-k Dielectric Nanomaterial
verfasst von : Masato Senami, Akinori Fukushima
Erschienen in: Theoretical Chemistry for Advanced Nanomaterials
Verlag: Springer Singapore
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
This article reviews progress of recently proposed local dielectric constant and polarizability. Local dielectric constant and polarizability are defined only in the formalism of quantum field theory. These quantities are expected to be good tool to the numerical analysis of nanosize materials. Basis set dependence of these quantities is explained with examples, an atom and a cation. The distribution of local polarizability in molecules is explained for covalent molecules, XHn (X=C, N, O, F, Si, P, S, Cl, Ge, As, Se, and Br). Particularly, the relation between chemical bond and dielectric property is discussed. Application to practical nanosize materials is introduced for hafnium dioxide, which is the leading candidate for next-generation gate dielectric thin film. Particularly, HfLaOx model is studied for the purpose of the clarification of the effect of the incorporation of La atoms to HfO2 on the dielectric properties.