nach oben

Erschienen in:

2011 | OriginalPaper | Buchkapitel

5. Photo-Electronic Properties

verfasst von : Keiji Tanaka, Koichi Shimakawa

Erschienen in: Amorphous Chalcogenide Semiconductors and Related Materials

Verlag: Springer New York

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config

KI-gestützte Suche

Aus

Abstract

Photo-excited electrons relax to ground states through several ways. One of the processes can be probed through photoluminescence, in which the most puzzling feature in amorphous chalcogenides may be the so-called half-gap rule of the peak energy. The origin will be discussed. Another photo-electronic property is the photoconduction. Most amorphous chalcogenides are good photoconductors, for which steady-state and transient characteristics are briefly discussed. Finally, we refer to a carrier avalanche effect in a-Se films, which has been applied to highly sensitive vidicons.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Vorheriges Kapitel Electronic Properties

Nächstes Kapitel Light-Induced Phenomena

The authors are reluctant to use the word “exciton” in disordered systems (Kasap et al. 2006), since the exciton radius may be larger than the structural disorder in amorphous materials. The word “electron–hole pair” may cause less misunderstanding.

“Geminate recombination” means a recombination of a photoexcited electron–hole pair. It occurs when the thermalization process (with a distance of \(\sim{[D(\hbar \omega - {E_{\textrm{g}}})/{E_{{\textrm{vib}}}}]^{1/2}}\), where D is the diffusion coefficient of a mobile carrier), which dissipates the excess energy of \(\hbar \omega - {E_{\textrm{g}}}\), cannot overcome a Coulombic electron–hole attractive force.

Experimentally, it is more or less difficult to distinguish photo-currents and photo-thermal currents in small-gap semiconductors such as a-As₂Te₃ (Tanaka 2007). The ideal photocurrent flows under fixed temperatures, while light illumination necessarily rises sample temperature, which increases the electrical conductivity in proportion to exp(−E _g/2k _B T).

Note that in the simplest case, \({V_{\textrm{R}}} = eN{L^2}/(2{{{\upvarepsilon }}_{\textrm{R}}}{\varepsilon _0})\), where L is the sample thickness, ɛ_R the relative dielectric constant, and ε ₀ the vacuum dielectric constant.

Abkowitz, M.A.: Light-induced changes in the DOS of chalcogenide glasses studied by xerographic techniques. J. Non-Cryst. Solids 141, 188–199 (1992)CrossRef

Adriaenssens, G.J.: Photoconductivity in materials research. In: Kasap, S., Capper, P. (eds.) Springer Handbook of Electronic and Photonic Materials, Chap. 7, pp. 137–146. Springer, New York, NY (2006)

Akiyama, M., Hanada, M., Takao, H., Sawada, K., Ishida, M.: Excess noise characteristics of hydrogenated amorphous silicon p-i-n photodiode films. Jpn. J. Appl. Phys. 41, 2552–2555 (2002)CrossRef

Aoki, T., Saito, D., Ikeda, K., Kobayashi, S., Shimakawa, K.: Radiative recombination processes in chalcogenide glasses deduced by lifetime measurements over 11 decades. J. Opt. Adv. Matter 7, 1749–1757 (2005)

Baranovskii, S.D., Karpov, V.G.: Localized electron states in glassy semiconductors (review). Sov. Phys. Semicond. 21, 1–10 (1987)

Belev, G., Tonchev, D., Fogal, B., Allen, C., Kasap, S.O.: Effects of oxygen and chlorine on charge transport in vacuum deposited pure a-Se films. J. Phys. Chem. Solids 68, 972–977 (2007)CrossRef

Benkhedir, M.L., Mansour, M., Djefaflia, F., Brinza, M., Adriaenssens, G.J.: Photocurrent measurements in chlorine-doped amorphous selenium. Phys. Status Solidi (b) 246, 1841–1844 (2009)CrossRef

Bishop, S.G., Strom, U., Friebele, E.J., Taylor, P.C.: The effects of impurities upon photoluminescence and optically induced paramagnetic states in chalcogenide glasses. J. Non-Cryst. Solids 32, 359–372 (1979)CrossRef

Bube, R.H. Photoconductivity of Solids. Wiley, New York, NY (1960)

Česnys, A., Juška, G., Montrimas, E.: Charge carrier transfer at high electric fields in noncrystalline semiconductors. In: Fairman R., Ushkov, B. (eds.) Semiconducting Chalcogenide Glass II, Chap. 2, pp. 15–55. Elsevier, Amsterdam (2004)

Conwell, E.M.: Hot electrons and impact ionization in poly (p-phenylene vinylene). Phys. Rev. B 57, R12670–R12672 (1998)CrossRef

Elliott, S.R.: Physics of Amorphous Materials 2nd ed. Longman, London (1990)

Evrard, R., Trukhin, A.N.: Photoelectric properties and the energy gap of SiO₂. Phys. Rev. B 25, 4102–4105 (1982)CrossRef

Fotland, R.A.: Some electrical properties of amorphous selenium films. J. Appl. Phys. 31, 1558–1565 (1960)CrossRef

Gee, C.M., Kastner, M.: Photoluminescence from E band centers in amorphous and crystalline SiO₂. J. Non-Cryst. Solids 40, 577–586 (1980)CrossRef

Gilleo, M.A.: Optical absorption and photoconductivity of amorphous and hexagonal selenium. J. Chem. Phys. 19, 1291–1297 (1951)CrossRef

Goldman, S.R., Kalikstein, K., Kramer, B.: Dember-effect theory. J. Appl. Phys. 49, 2849–2854 (1978)CrossRef

Hammam, M., Adriaenssens, G.J., Dauwen, J., Seynhaeve, G., Grevendonk, W.: Influence of oxygen on the electronic gap-state density of a-As₂Se₃. J. Non-Cryst. Solids 119, 89–94 (1990)CrossRef

Higashi, G.S., Kastner, M.: Excitation-energy dependence of photoluminescence bandwidth in a-As₂Se₃: Observation of the mobility gap? Phys. Rev. Lett. 47, 124–127 (1981)CrossRef

Jandieri, K., Rubel, O., Baranovskii, S.D., Reznik, A., Rowlands, J.A., Kasap, S.O.: Lucky-drift model for impact ionization in amorphous semiconductors. J. Mater. Sci.: Mater. Electron. 20, S221–S225 (2009)CrossRef

Juška, G., Arlauskas, K.: Impact ionization and mobilities of charge carriers at high electric fields in amorphous selenium. Phys. Status Solidi (a) 59, 389–393 (1980)CrossRef

Kasap, S., Koughia, C., Singh, J., Ruda, H., O’Leary, S.K.: Optical properties of electronic materials: Fundamentals and characterization. In: Kasap, S., Capper, P. (eds.) Handbook of Electronic and Photonic Materials, Chap. 3, pp. 47–77. Springer, New York, NY (2006)

Kasap, S., Rowlands, J.A., Baranovskii, S.D., Tanioka, K.: Lucky drift impact ionization in amorphous semiconductors. J. Appl. Phys. 96, 2037–2048 (2004)CrossRef

Katsume, T., Hiramoto, M., Yokoyama, M.: Photocurrent multiplication in naphthalene tetracarboxylic anhydride film at room temperature. Appl. Phys. Lett. 69, 3722–3724 (1996)CrossRef

Kolomiets, B.T.: Vitreous semiconductors (II). Phys. Status Solidi 7, 713–731 (1964)CrossRef

Kolomiets, B.T., Lyubin, V.M.: Photoelectric phenomena in amorphous chalcogenide semiconductors. Phys. Status Solidi (a) 17, 11–46 (1973)CrossRef

Koós, M., Kósa Somogyi, I., Vassilyev, V.A.: Photoluminescence in doped and annealed GeSe₂ glass. J. Non-Cryst. Solids 43, 245–253 (1981)CrossRef

Koughia, K., Kasap, S.O.: Density of states of a-Se near the valence band. J. Non-Cryst. Solids 352, 1539–1542 (2006)CrossRef

LaCourse, W.C., Twaddell, V.A., Mackenzie, J.D.: Effects of impurities on the electrical conductivity of glassy selenium. J. Non-Cryst. Solids 3, 234–236 (1970)CrossRef

Lundt, H., Weiser, G.: Mid-gap luminescence and its excitation spectrum in trigonal selenium single crystals. Solid State Commun. 48, 827–830 (1983)CrossRef

Mao, J., Rapelje, K.A., Blodgett-Ford, S.J., Delos, J.B., König, A., Rinneberg, H.: Photoabsorption spectra of atoms in parallel electric and magnetic fields. Phys. Rev. A 48, 2117–2126 (1993)CrossRef

Messina, F., Vella, E., Cannas, M., Boscaino, R.: Evidence of delocalized excitons in amorphous solid. Phys. Rev. Lett. 105, 116401 (2010)CrossRef

Mott, N.F., Davis, E.A.: Electronic Processes in Non-crystalline Materials. Clarendon Press, Oxford (1979)

Murayama, K.: Time-resolved photoluminescence in chalcogenide glasses. J. Non-Cryst. Solids 59–60, 983–990 (1983)CrossRef

Naito, H., Ding, J., Okuda, M.: Determination of localized-state distributions in amorphous semiconductors from transient photoconductivity. Appl. Phys. Lett. 64, 1830–1832 (1994)CrossRef

Oda, S., Kastner, M.A., Wasserman, E.: Transient photoluminescence and photo-induced optical absorption in polymeric and crystalline sulphur. Philos. Mag. B 50, 373–377 (1984)CrossRef

Oheda, H.: The exponential absorption edge in amorphous Ge-Se compounds. Jpn. J. Appl. Phys. 18, 1973–1978 (1979)CrossRef

Pfister, G., Liang, K.S., Morgan, M.: Hole transport, photoluminescence, and photoinduced spin resonance in thallium-doped amorphous As₂Se₃. Phys. Rev. Lett. 41, 1318–1321 (1978)CrossRef

Pfister, G., Morgan, M.: Defects in chalcogenide glasses l. The influence of thermally induced defects on transport in a-As₂Se₃. Philos. Mag. B 41, 191–207 (1980)CrossRef

Ristein, J., Taylor, P.C., Ohlsen, W.D., Weiser, G.: Radiative recombination center in As₂Se₃ as studied by optically detected magnetic resonance. Phys. Rev. B 42, 11845–11856 (1990)CrossRef

Sakurai, Y., Nagasawa, K.: Radial distribution of some defect-related optical absorption and PL bands in silica glasses. J. Non-Cryst. Solids 277, 82–90 (2000)CrossRef

Scher, H., Montroll, E.W.: Anomalous transit-time dispersion in amorphous solids. Phys. Rev. B 12, 2455–2477 (1975)CrossRef

Seki, M., Hachiya, K., Yoshida, K.: Photoluminescence excitation process and optical absorption in Ge-S chalcogenide glasses. J. Non-Cryst. Solids 324, 127–132 (2003)CrossRef

Shimakawa, K., Yoshida, A., Arizumi, T.: Photoconduction of glasses in the Te-Se-Sb system. J. Non-Cryst. Solids 16, 258–266 (1974)CrossRef

Song, H.-Z., Adriaenssens, G.J., Emelianova, E.V., Arkhipov, V.I.: Distribution of gap states in amorphous selenium thin films. Phys. Rev. B 59, 10607–10613 (1999)CrossRef

Spear, W.E., Adams, A.R.: Photogeneration of charge carriers and related optical properties in orthorhombic sulphur. J. Phys. Chem. Solids 27, 281–290 (1966)CrossRef

Street, R.A.: Luminescence in amorphous semiconductors. Adv. Phys. 25, 397–453 (1976)CrossRef

Street, R.A., Mott, N.F.: Status in the gap in glassy semiconductors. Phys. Rev. Lett. 35, 1293–1296 (1975)CrossRef

Tanaka, K.: Free-carrier generation in amorphous semiconductors by intense subgap excitation. Appl. Phys. Lett. 73, 3435–3437 (1998)CrossRef

Tanaka, K.: Sub-gap excitation effects in As₂S₃ glass. J. Non-Cryst. Solids 266–269, 889–893 (2000)CrossRef

Tanaka, K.: The charged defect exists? J. Optoelectron. Adv. Mater. 3, 189–198 (2001)

Tanaka, K.: Comment on “Investigation of the optical and electronic properties of Ge₂Sb₂Te₅ phase change material in its amorphous, cubic, and hexagonal phases”. J. Appl. Phys. 101, 026111 (2007)CrossRef

Tanaka, K., Itoh, M., Yoshida, M., Ohto, M.: Photoelectric properties of Ag-As-S glasses. J. Appl. Phys. 78, 3895–3901 (1995)CrossRef

Tanaka, K., Nakayama, S.: Band-tail characteristics in amorphous semiconductors studied by the constant-photocurrent method. Jpn. J. Appl. Phys. 38, 3986–3992 (1999)CrossRef

Tanioka, K., Yamazaki, J., Shidara, K., Taketoshi, K., Kawamura, T., Ishioka, S., Takasaki, Y.: An avalanche-mode amorphous selenium photoconductive layer for use as a camera tube target. IEEE Electron Device Lett. 8, 392–394 (1987)CrossRef

Terakado, N., Tanaka, K.: Photo-induced phenomena in GeO₂ glass. J. Non-Cryst. Solids 352, 3815–3822 (2006)CrossRef

Toyama, T., Hiratsuka, K., Okamoto, H., Hamakawa, Y.: Hot-electron-induced electroluminescence and avalanche multiplication in hydrogenated amorphous silicon. J. Appl. Phys. 77, 6354–6357 (1995)CrossRef

Trukhin, A.N.: Excitons, localized states in silicon dioxide and related crystals and glasses. In: Pacchioni, G., Skuja, L., Griscom, D.L. (eds.) Defects in SiO₂ and Related Dielectrics: Science and Technology, pp. 235–283. Kluwer, Dordrecht (2000)CrossRef

Weimer, P.K., Cope, A.D.: Photoconductivity in amorphous selenium. RCA Rev. 12, 314–334 (1951)

Weinstein, B.A.: Anomalous pressure response of luminescence in c-As₂S₃ and a-As₂SeS₂: Consequences for defect structure in chalcogenides. Philos. Mag. B 50, 709–729 (1984)CrossRef

Weiss, D.S. Abkowitz, M.: Organic photoconductors. In: Kasap, S., Capper, P. (eds.) Springer Handbook of Electronic and Photonic Materials, Chap. 39, pp. 953–982. Springer, New York, NY (2006)

Wey, H.-Y., Fritzsche, H.: Photovoltalic effect and space charge capacitance of amorphous semiconductor-metal contacts. J. Non-Cryst. Solids 8–10, 336–340 (1972)CrossRef

Titel: Photo-Electronic Properties
verfasst von: Keiji Tanaka
Koichi Shimakawa
Verlag: Springer New York
Buch: Amorphous Chalcogenide Semiconductors and Related Materials
Print ISBN: 978-1-4419-9509-4

Electronic ISBN: 978-1-4419-9510-0

Copyright-Jahr: 2011
DOI: https://doi.org/10.1007/978-1-4419-9510-0_5

Premium Partner

Marktübersichten

Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.

Zur Marktübersicht