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Journal of Materials Science: Materials in Electronics

Erschienen in:

14.11.2019

Photoelectrochemical performance of W-doped BiVO₄ photoanode

verfasst von: Lei Zhao, Jindong Wei, Yanting Li, Chun Han, Lin Pan, Zhifeng Liu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 24/2019

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Abstract

One of the crucial challenges in enhancing the photoelectrochemical (PEC) water splitting performance of BiVO₄ photoanode is to improve the charge separation and transfer efficiency. Therefore, in this paper, a novel multilayer gradient W-doped BiVO₄ photoanode is fabricated for improved performances in solar water splitting. Firstly, different amounts of W mono-doped BiVO₄ photoanodes are prepared, and the W (5%)-doped BiVO₄ photoanode reaches highest photocurrent density of 0.61 mA cm⁻² at 1.23 V versus reversible hydrogen electrode (RHE). Compared with the photocurrent density of the pure BiVO₄ photoanode (0.28 mA cm⁻²), the enhancement can be attributed to the doped W which acts as an electron donor that could reduce the surface charge transfer resistance and facilitate charge transfer. Furthermore, multilayer gradient W-doped BiVO₄ photoanodes are prepared to enhance PEC performances. The BVO-530 achieves a photocurrent density of 1.17 mA cm⁻² at 1.23 V versus RHE due to the multilayer gradient structure which forms a diffusion path for electron–holes caused by the gradual increase in the Fermi level. The mechanisms of multilayer gradient W-doped BiVO₄ photoanodes are discussed in detail based on PEC measurements. This work provides a new strategy for designing and fabricating photoanode systems to enhance the charge separation and transport for efficient water splitting.

Vorheriger Artikel Prussian blue-derived transition metal oxide ZnO/ZnFe2O4 microcubes as anode materials for lithium ion batteries

Nächster Artikel Effect of NaCl on the microstructure and electrical properties of K0.5Na0.5NbO3 ceramics prepared by cold sintering process

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Titel: Photoelectrochemical performance of W-doped BiVO4 photoanode
verfasst von: Lei Zhao
Jindong Wei
Yanting Li
Chun Han
Lin Pan
Zhifeng Liu
Publikationsdatum: 14.11.2019
Verlag: Springer US
Erschienen in: Journal of Materials Science: Materials in Electronics / Ausgabe 24/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-019-02521-4

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