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Erschienen in:
01.01.2013
Preparation and properties of surface textured ZnO: Al films by direct current pulse magnetron sputtering
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2013
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Abstract
Transparent conductive surface textured Al-doped zinc oxide (ZnO:Al, AZO) thin films were prepared on glass substrates by direct current pulse magnetron sputtering at substrate temperature of 270 °C and post-etching in NaOH solution at room temperature. The effects of Ar flow rate on the structural, optical, electrical properties and light trapping ability were investigated systematically. With the increasing of Ar flow rate from 10 to 50 sccm, different surface features ranging from honeycomb-like to crater-like structures were observed. The relationship between surface textured structures and Ar flow rate was discussed. The AZO film deposited with Ar flow rate in 50 sccm displayed fine optoelectronic properties, improved figure of merit and effective surface textured structures for light trapping, which could be applied as a transparent conducting electrode in silicon-based thin film solar cells.