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Erschienen in:
01.01.2013
Phase structures and electrical properties of LiSbO3 doped 0.994K0.5Na0.5NbO3–0.004K5.4Cu1.3Ta10O29–0.002BiMnO3 piezoelectric ceramics
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2013
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Abstract
LiSbO3 (LS) doped 0.994K0.5Na0.5NbO3–0.004K5.4Cu1.3Ta10O29–0.002BiMnO3 (KNN–KCT–BM) piezoelectric ceramics with excellent properties have been fabricated by conventional ceramic processing. It is found that the dopant of LS has considerable effect on the grain size, phase structure and electrical properties of KNN–KCT–BM ceramics. The KNN–KCT–BM ceramics doped with 4.5 mol% LS ceramics show good electrical properties such as d
33 = 208 pC/N, Q
m
= 95, k
p
= 40.5 %, T
c
= 335 °C, T
o−t
= 55 °C, ε
r
= 1,190 and rather low dielectric dissipation of tanδ = 1.25 % (1 kHz) and tanδ < 1 % (100 kHz). This indicates that 4.5 mol% LS-doped KNN–KCT–BM piezoceramic is an alternative lead-free piezoelectric material for the development of piezoelectric devices working at high temperature.