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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2017

24.01.2017

Quantum analysis based extraction of frequency dependent intrinsic and extrinsic parameters for GEWE-SiNW MOSFET

verfasst von: Neha Gupta, Rishu Chaujar

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2017

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Abstract

This paper examines the bias-independent and bias-dependent extrinsic and intrinsic parameters of the gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) metal–oxide–semiconductor field-effect transistor (MOSFET) by considering quantum effects. The results reveal that the effect of extrinsic parameters such as the resistance, capacitance, and inductance of the electrodes is less pronounced in the GEWE-SiNW compared with the conventional SiNW or conventional MOSFET. The intrinsic transconductance of the GEWE-SiNW device can be further improved by tuning the gate metal workfunction difference, which results in shorter time constant and lower parasitic capacitance, making it suitable for radiofrequency integrated circuit (RFIC) design. It is also observed that, in the saturation region, the device exhibits improved transconductance and noticeable reduction in \(C_{\mathrm{sdx}}\) [due to drain-induced barrier lowering (DIBL)] but the parasitic capacitance and time constant also reduce. In addition, a non-quasi-static small-signal model has been studied in terms of Z and Y parameters; the results show good agreement with the results of three-dimensional (3D) simulations at thousands of GHz.
Vorheriger Artikel Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applications
Nächster Artikel Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation

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Metadaten
Titel
Quantum analysis based extraction of frequency dependent intrinsic and extrinsic parameters for GEWE-SiNW MOSFET
verfasst von
Neha Gupta
Rishu Chaujar
Publikationsdatum
24.01.2017
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2017
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-016-0949-4

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