Ausgabe 2/2014
Inhalt (28 Artikel)
Electron spin polarization and longitudinal autosoliton current in p-InSb in a longitudinal magnetic field
I. K. Kamilov, A. A. Stepurenko, A. E. Gummetov
Effect of annealing on the electrical properties of Pb1 − x Mn x Te single crystals with excess tellurium
G. Z. Bagiyeva, G. D. Abdinova, N. B. Mustafayev, D. Sh. Abdinov
Optical absorption of vanadium in ZnSe single crystals
Yu. A. Nitsuk
Role of charged defects in the photoconductivity of Se95As5 chalcogenide glassy semiconductor with the EuF3 impurity
A. I. Isayev, S. I. Mekhtiyeva, S. N. Garibova, V. Z. Zeynalov
Anomalies in the thermal and electrical conductivity of CuIn5Se8 crystals
V. P. Mygal, A. V. But, I. V. Bodnar
Optical and electrical properties of 4H-SiC irradiated with Xe ions
E. V. Kalinina, N. A. Chuchvaga, E. V. Bogdanova, A. M. Strel’chuk, D. B. Shustov, M. V. Zamoryanskaya, V. A. Skuratov
Investigations of the kinetics of nonequilibrium carriers in a semiconductor by the average value of the photoconductivity under periodic optical excitation
B. N. Denisov, E. V. Nikishin
Electron-phonon processes in semiconductors at low temperatures
S. A. Aliev
Raman scattering in PbTe and PbSnTe films: In situ phase transformations
V. A. Volodin, M. P. Sinyukov, D. V. Shcheglov, A. V. Latyshev, E. V. Fedosenko
Impact ionization of excitons in single-crystal silicon and its effect on the exciton concentration and luminescence near the fundamental absorption edge
A. M. Emel’yanov
Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves
T. A. Bryantseva, D. V. Lybchenko, V. E. Lybchenko, I. A. Markov, R. I. Markov
Features of the transformation of the exciton cathodoluminescence spectra of CdSe epitaxial layers with increasing excitation level
E. A. Senokosov, V. I. Chukita, I. N. Odin, M. V. Chukichev
Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment
I. I. Izhnin, A. I. Izhnin, K. D. Mynbaev, N. L. Bazhenov, E. I. Fitsych, M. V. Yakushev, N. N. Mikhailov, V. S. Varavin, S. A. Dvoretsky
Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon
A. N. Mikhaylov, A. I. Belov, D. S. Korolev, A. O. Timofeeva, V. K. Vasiliev, A. N. Shushunov, A. I. Bobrov, D. A. Pavlov, D. I. Tetelbaum, E. I. Shek
Dielectric properties of MnGa2S4 single crystals in an alternating electric field
N. N. Niftiev, O. B. Tagiev, M. B. Muradov, F. M. Mamedov
Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation
I. A. Tambasov, V. G. Myagkov, A. A. Ivanenko, L. E. Bykova, E. V. Yozhikova, I. A. Maksimov, V. V. Ivanov
Photosensitivity of structures with quantum wells under normal radiation incidence
V. B. Kulikov, V. P. Chaly
Specific features of the charge carrier mobility in nanowires in transverse electric and magnetic fields
E. P. Sinyavskii, S. A. Karapetyan
Isotype surface-barrier n-TiN/n-Si heterostructure
M. N. Solovan, V. V. Brus, P. D. Maryanchuk
Inelastic electron scattering cross-section spectroscopy of Ge x Si1 − x nanoheterostructures
A. S. Parshin, E. P. P’yanovskaya, O. P. Pchelyakov, Yu. L. Mikhlin, A. I. Nikiforov, V. A. Timofeev, M. Yu. Esin
On the effect of electron-phonon interaction on the temperature dependences of magnetotransport in quantum hall systems
A. A. Greshnov, Y. M. Beltukov
Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix
A. V. Belolipetskiy, O. B. Gusev, A. P. Dmitriev, E. I. Terukov, I. N. Yassievich
Effect of bremsstrahlung γ-ray photons and neutrons on the parameters of indium-selenium photoconverters
O. N. Sydor, O. A. Sydor, Z. D. Kovalyuk, V. I. Dubinko
Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy
A. V. Solomonov, S. A. Tarasov, E. A. Men’kovich, I. A. Lamkin, S. Yu. Kurin, A. A. Antipov, I. S. Barash, A. D. Roenkov, H. Helava, Yu. N. Makarov
Synthesis of thin p-type rutile films
V. M. Ievlev, S. B. Kushev, O. V. Ovchinnikov, M. P. Sumez, A. N. Latyshev, M. N. Bezryadin, L. Yu. Leonova, S. V. Kannykin, A. M. Vozgorkov, M. S. Smirnov
Determination of the composition of multicomponent chalcogenide semiconductors by X-ray fluorescence analysis
G. A. Bordovskii, A. V. Marchenko, A. V. Nikolaeva, P. P. Seregin, E. I. Terukov
Comparative photoelectric characteristics of nanostructured Pb1 − x Sn x Se films obtained by the codeposition and layer-by-layer deposition of PbSe and SnSe
H. N. Mukhamedzyanov, V. F. Markov, L. N. Maskaeva
Chemical vapor deposition of isolated spherical diamond particles with embedded silicon-vacancy color centers onto the surface of synthetic opal
S. A. Grudinkin, N. A. Feoktistov, K. V. Bogdanov, M. A. Baranov, A. V. Baranov, A. V. Fedorov, V. G. Golubev