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Semiconductors

Ausgabe 7/2016

Inhalt (25 Artikel)

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Solubility of oxygen in CdS single crystals and their physicochemical properties

N. K. Morozova, A. A. Kanakhin, A. S. Shnitnikov

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

P. V. Seredin, A. V. Fedyukin, I. N. Arsentyev, L. S. Vavilova, I. S. Tarasov, T. Prutskij, H. Leiste, M. Rinke

Electronic Properties of Semiconductors

Features of conductivity mechanisms in heavily doped compensated V1–x Ti x FeSb Semiconductor

V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, Yu. V. Stadnyk, V. Ya. Krayovskyy, A. M. Horyn

Electronic Properties of Semiconductors

Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3

A. A. Kudryashov, V. G. Kytin, R. A. Lunin, V. A. Kulbachinskii, A. Banerjee

Electronic Properties of Semiconductors

Electron exchange between tin impurity U – centers in PbS z Se1–z alloys

A. V. Marchenko, E. I. Terukov, P. P. Seregin, A. N. Rasnjuk, V. S. Kiselev

Electronic Properties of Semiconductors

Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov

Spectroscopy, Interaction With Radiation

Effect of coulomb correlations on luminescence and absorption in compensated semiconductors

N. A. Bogoslovskiy, P. V. Petrov, Yu. L. Ivánov, N. S. Averkiev, K. D. Tsendin

Surfaces, Interfaces, and Thin Films

Local emission spectroscopy of surface micrograins in AIIIBV semiconductors

N. D. Zhukov, E. G. Gluhovskoy, D. S. Mosiyash

Surfaces, Interfaces, and Thin Films

Indium nanowires at the silicon surface

A. S. Kozhukhov, D. V. Sheglov, A. V. Latyshev

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields

Ya. V. Kuznetsova, V. N. Jmerik, D. V. Nechaev, A. M. Kuznetsov, M. V. Zamoryanskaya

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

V. V. Romanov, P. A. Dement’ev, K. D. Moiseev

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

Yu. B. Vasilyev, N. N. Mikhailov, G. Yu. Vasilyeva, Yu. L. Ivánov, A. O. Zakhar’in, A. V. Andrianov, L. E. Vorobiev, D. A. Firsov, M. N. Grigoriev, A. V. Antonov, A. V. Ikonnikov, V. I. Gavrilenko

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films

P. A. Ivanov, M. F. Kudoyarov, M. A. Kozlovski, A. S. Potapov, T. P. Samsonova

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Study of deep levels in GaAs p–i–n structures

M. M. Sobolev, F. Yu. Soldatenkov, V. A. Kozlov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium

A. N. Imenkov, E. A. Grebenshchikova, V. A. Shutaev, A. M. Ospennikov, V. V. Sherstnev, Yu. P. Yakovlev

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

G. K. Krivyakin, V. A. Volodin, S. A. Kochubei, G. N. Kamaev, A. Purkrt, Z. Remes, R. Fajgar, T. H. Stuchliková, J. Stuchlik

Amorphous, Vitreous, and Organic Semiconductors

Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode

S. A. Fefelov, L. P. Kazakova, D. Arsova, S. A. Kozyukhin, K. D. Tsendin, O. Yu. Prikhodko

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Nonlinear optical response of planar and spherical CdSe nanocrystals

A. S. Selyukov, A. A. Isaev, A. G. Vitukhnovsky, V. L. Litvak, A. V. Katsaba, V. M. Korshunov, R. B. Vasiliev

Physics of Semiconductor Devices

Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors

A. S. Kyuregyan, A. V. Gorbatyuk, B. V. Ivanov

Physics of Semiconductor Devices

Electrochemical lithiation of silicon with varied crystallographic orientation

E. V. Astrova, A. M. Rumyantsev, G. V. Li, A. V. Nashchekin, D. Yu. Kazantsev, B. Ya. Ber, V. V. Zhdanov

Physics of Semiconductor Devices

On current spreading in solar cells: a two-parameter tube model

M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, N. A. Kalyuzhnyy

Fabrication, Treatment, and Testing of Materials and Structures

Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy

Ya. A. Parkhomenko, P. A. Dement’ev, K. D. Moiseev

Fabrication, Treatment, and Testing of Materials and Structures

Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates

V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, A. N. Smirnov, V. E. Bugrov, A. E. Romanov, P. N. Brunkov, D. A. Kirilenko

Fabrication, Treatment, and Testing of Materials and Structures

Technique for forming ITO films with a controlled refractive index

L. K. Markov, I. P. Smirnova, A. S. Pavluchenko, M. V. Kukushkin, D. A. Zakheim, S. I. Pavlov

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