Ausgabe 9/2005
Inhalt (24 Artikel)
Formation of nanostructures in a Ga2Se3/GaAs system
N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, A. A. Starodubtsev
Microphotoluminescence of undoped single-crystal zinc telluride produced by nonequilibrium vapor-phase growth techniques
V. V. Ushakov, Yu. V. Klevkov
Exact self-compensation of conduction in Cd0.95Zn0.05Te:Cl crystals in a wide range of Cd vapor pressures
O. A. Matveev, A. I. Terent’ev, N. K. Zelenina, V. N. Gus’kov, V. E. Sedov, A. A. Tomasov, V. P. Karpenko
Optical properties of ZnGeP2 in the UV spectral region
Yu. M. Basalaev, A. B. Gordienko, A. S. Poplavnoi
Instability of drift waves in two-component solid-state plasma
A. A. Bulgakov, O. V. Shramkova
Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters
P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
Study of the properties of Hg1−x−y−z CdxMnyZnzTe as a new infrared optoelectronic material
I. N. Gorbatyuk, S. E. Ostapov, S. G. Dremlyuzhenko, R. A. Zaplitnyi, I. M. Fodchuk, V. V. Zhikharevich, V. G. Deibuk, N. A. Popenko, I. V. Ivanchenko, A. A. Zhigalov, S. Yu. Karelin
Transport coefficients of n-Bi2Te2.7Se0.3 in a two-band model of the electron spectrum
P. P. Konstantinov, L. V. Prokof’eva, M. I. Fedorov, D. A. Pshenai-Severin, Yu. I. Ravich, V. V. Kompaniets, V. A. Chistyakov
The formation of nanodimensional structures on the surface of p-CdTe crystals exposed to a single radiation pulse from a ruby laser
A. Baidullaeva, A. I. Vlasenko, L. F. Cuzan, O. S. Litvin, P. E. Mozol’
Effect of a submonolayer metal film on band bending in a semiconductor substrate
S. Yu. Davydov, A. V. Pavlyk
Photoelectric properties of surface-barrier structures based on Zn2−2x CuxInxSe2 films obtained by selenization
V. Yu. Rud’, Yu. V. Rud’, V. F. Gremenok, E. P. Zaretskaya, O. N. Sergeeva
Simulation of special features of the drift-mobility saturation in submicrometer silicon structures
V. A. Gergel’, Yu. V. Gulyaev, M. N. Yakupov
Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers
A. M. Emel’yanov, N. A. Sobolev, E. I. Shek, V. V. Lundin, A. S. Usikov, E. O. Parshin
A spin filter with a quantum point contact in a dilute magnetic semiconductor
S. A. Ignatenko, V. E. Borisenko
The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates
M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, A. A. Tonkikh
Electronic structure of titanium disulfide nanostructures: Monolayers, nanostripes, and nanotubes
V. V. Ivanovskaya, G. Seifert, A. L. Ivanovskii
High-frequency nonlinear response of double-well nanostructures
V. F. Elesin, I. Yu. Kateev
Polarization of the optical emission of polaron excitons in anisotropic quantum dots
A. Yu. Maslov, O. V. Proshina
A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure
D. V. Morozov, K. V. Smirnov, A. V. Smirnov, V. A. Lyakhov, G. N. Goltsman
Semiconductor WGM lasers for the mid-IR spectral range
V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova, Yu. P. Yakovlev, N. S. Averkiev, A. Krier, G. Hill
Semiconductor-insulator structures in the phototargets of vidicons sensitive in the middle infrared region of the spectrum
N. F. Kovtonyuk, V. P. Misnik, A. V. Sokolov
A mechanism of electroluminescence in silicon diodes with a high dislocation density
A. V. Sachenko, Yu. V. Kryuchenko
A combined model of a resonant-tunneling diode
I. I. Abramov, I. A. Goncharenko, N. V. Kolomeitseva