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Erschienen in:
01.04.2015
Simple strategy for production of aluminium/nitrogen co doped zinc oxide nanowires
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 4/2015
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Abstract
In this study, a novel ZnO homojunction was produced using hydrothermally grown n-type ZnO nanowires coated with p-type ZnO:Al:N [Zn (98 at.%), Al (1 at.%) and N (1 at.%)]. The fabricated homojunction was extensively characterized by scanning electron microscopy, energy dispersive spectroscopy, photoluminescence emission measurements and current voltage measurements. It was found that the p-type ZnO:Al:N affected the vertically aligned ZnO nanowires due to the incorporated dopant and very large capillary force during the drying process. PL emission measurements indicated that the p-type ZnO:Al:N coating suppressed the UV emission peak without degrading the visible emission peak. In terms of solar cell performances, the homojunctional device exhibits photovoltaic behavior with power conversion efficiency ~0.001576 %.