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Erschienen in: Journal of Materials Science: Materials in Electronics 13/2019

31.05.2019

Solution-processable (Pc′)Eu(Pc′)Eu[TP(OH)PP]/rGO bilayer heterojunction organic transistors with exceptional excellent ambipolar performance

verfasst von: Xia Kong, Guang Lu, Xiangyang Wang, Shuai Zhao, Daofeng Sun, Xiyou Li, Yanli Chen, Jianzhuang Jiang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 13/2019

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Abstract

For the purpose of fabricating next generation of microelectronics and photonics, the transistor that simultaneously provides high-efficiency charge transport and air-stable ambipolar performance becomes highly desired. In this paper, the bilayer heterojunction field-effect transistors, named as t-Pc-1/rGO (HFET-1) and t-Pc-2/rGO (HFET-2), are constructed for the first time by using a simple two-step solution-processing approach, in which the high conductive reduced graphene oxide (rGO) film as the sub-layer and the film of ambipolar sandwich mixed (phthalocyaninato)(porphyrinato) europium triple-deckers (Pc′)Eu(Pc′)Eu[TP(OH)PP] {Pc′ = Pc, [Pc(OPh)8]} (t-Pc-1, t-Pc-2) as the top layer, respectively. The resulting bilayer heterojunction devices exhibit significantly improved air-stable ambipolar performance with the carrier mobilities of ca. 107 to 108 fold higher than those of pristine triple-deckers, and the Ion/Ioff of 102 to 103 fold higher than that of the single-component rGO device. In particular, due to the heterojunction effect in an “accumulation mode”, the device HFET-2 shows the ultrahigh and balanced mobilities between hole, 30.9 cm2 V−1 s−1, and electron, 39.6 cm2 V−1 s−1, with the optimized ON/OFF ratio of 103 for both carriers, representing the best result for ambipolar OFET devices reported thus far.

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Metadaten
Titel
Solution-processable (Pc′)Eu(Pc′)Eu[TP(OH)PP]/rGO bilayer heterojunction organic transistors with exceptional excellent ambipolar performance
verfasst von
Xia Kong
Guang Lu
Xiangyang Wang
Shuai Zhao
Daofeng Sun
Xiyou Li
Yanli Chen
Jianzhuang Jiang
Publikationsdatum
31.05.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 13/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01603-7

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