Ausgabe 2/2009
Inhalt (11 Artikel)
Room temperature carrier transport in graphene
R. S. Shishir, F. Chen, J. Xia, N. J. Tao, D. K. Ferry
Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model
M. V. Fischetti, S. Jin, T.-W. Tang, P. Asbeck, Y. Taur, S. E. Laux, M. Rodwell, N. Sano
A method for performing fully quantum mechanical simulations of gated silicon quantum wire structures
R. Akis, D. K. Ferry, M. J. Gilbert
Simulation of charge transport in ion channels and nanopores with anisotropic permittivity
Reza Toghraee, R. Jay Mashl, Kyu Il Lee, Eric Jakobsson, Umberto Ravaioli
Modeling the effects of applied stress and wafer orientation in silicon devices: from long channel mobility physics to short channel performance
R. Kotlyar, M. D. Giles, S. Cea, T. D. Linton, L. Shifren, C. Weber, M. Stettler
Computational nanoelectronics research and education at nanoHUB.org
Benjamin P. Haley, Gerhard Klimeck, Mathieu Luisier, Dragica Vasileska, Abhijeet Paul, Swaroop Shivarajapura, Diane L. Beaudoin
Global modeling of carrier-field dynamics in semiconductors using EMC–FDTD
K. J. Willis, J. S. Ayubi-Moak, S. C. Hagness, I. Knezevic