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Journal of Electronic Materials

Ausgabe 1/1999

Inhalt (13 Artikel)

Regular Issue Paper

Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs (311)A substrates

Zhichuan Niu, Richard Nötzel, Uwe Jahn, Hans-Peter Schönherr, Jörg Fricke, Klaus H. Ploog

Regular Issue Paper

Study on ta diffusion barrier in Al/Si system

Jaehwa Kim, Dong-Soo Yoon, Joon Seop Kwak, Hong Koo Baik, Sung-Man Lee

Regular Issue Paper

Nucleation, growth and retrogrowth of oxidation induced stacking faults in thin silicon-on-insulator

Luis Felipe Giles, Yasuo Kunii, Katsutoshi Izumi

Regular Issue Paper

Polycrystalline silicon thin film transistors fabricated in various solid phase crystallized films deposited on glass substrates

Dimitrios N. Kouvatsos, Apostolos T. Voutsas, Miltiadis K. Hatalis

Regular Issue Paper

Structural and chemical characterization of as-deposited microcrystalline indium oxide films prepared by dc reactive magnetron sputtering

C. Xirouchaki, K. Moschovis, E. Chatzitheodoridis, G. Kiriakidis, H. Boye, P. Morgen

Regular Issue Paper

Spectral characteristics of GaAs solar cells grown by LPE

M. Milanova, A. Mintairov, V. Rumyantsev, K. Smekalin

Regular Issue Paper

GaInSb photodetectors developed from single crystal bulk grown materials

H. X. Yuan, D. Grubisic, T. T. S. Wong

Regular Issue Paper

The principle cause of crack defects in optoelectronic materials with phosphorus-containing underlayer

W. H. Cheng, M. T. Sheen, J. H. Kuang, C. H. Chen

Regular Issue Paper

Interfacial reactions between Ni substrate and the component Bi in solders

M. S. Lee, C. M. Liu, C. R. Kao

Regular Issue Paper

The creep behavior of In-Ag eutectic solder joints

H. L. Reynolds, S. H. Kang, J. W. Morris Jr.

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