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Journal of Electronic Materials

Ausgabe 6/2007

Inhalt (12 Artikel)

Ultra-Thin Si1−x Ge x Dislocation Blocking Layers for Ge/Strained Si CMOS Devices

Sachin Joshi, Sagnik Dey, Michelle Chaumont, Alan Campion, Sanjay K. Banerjee

Structural and Optical Properties of ZnO Nanotips Grown on GaN Using Metalorganic Chemical Vapor Deposition

J. Zhong, G. Saraf, H. Chen, Y. Lu, Hock M. Ng, T. Siegrist, A. Parekh, D. Lee, E. A. Armour

The Effect of Bi Contamination on the Solidification Behavior of Sn-Pb Solders

Kil-Won Moon, Ursula R. Kattner, Carol A. Handwerker

Recovery of Dry Etching–Induced Damage in n-GaN by Nitrogen Plasma Treatment at Growth Temperature

X. Wang, G. Yu, B. Lei, X. Wang, C. Lin, Y. Sui, S. Meng, M. Qi, A. Li