Ausgabe 3/2001
Inhalt (20 Artikel)
Heteroepitaxy of II-VI compound semiconductors on cooled substrates
A. P. Belyaev, V. P. Rubets
Molecular-dynamics simulation of structural properties of Ge1−x Snx substitutional solid solutions
V. G. Deibuk, Yu. G. Korolyuk
Low-temperature diffusion of indium into germanium assisted by atomic hydrogen
V. M. Matyushin
A new magnetic semiconductor Cd1−x MnxGeP2
G. A. Medvedkin, T. Ishibashi, T. Nishi, K. Sato
Temperature dependence of a magnetoresistance effect in the films of ferromagnetic semiconductors based on oxides of rare-earth elements
V. F. Kabanov, S. A. Karasev, Ya. G. Fedorenko
Specific features of the nonequilibrium distribution function for electron scattering by polar optical phonons in III-V semiconductors
S. I. Borisenko
On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta
M. S. Yunusov, M. Karimov, M. A. Dzhalelov
Generation-recombination processes in semiconductors
I. N. Volovichev, Yu. G. Gurevich
Capacitance-voltage characteristics of p-n structures based on (111)Si doped with erbium and oxygen
A. M. Emel’yanov, N. A. Sobolev, A. N. Yakimenko
Negative luminescence in p-InAsSbP/n-InAs diodes
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin
Characterization of electroluminescent structures based on gallium arsenide ion-implanted with ytterbium and oxygen
D. W. Palmer, V. A. Dravin, V. M. Konnov, E. A. Bobrova, N. N. Loiko, S. G. Chernook, A. A. Gippius
Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties
T. I. Voronina, B. E. Zhurtanov, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rozov, Yu. P. Yakovlev
Extension of the frequency range of the noise spectral density in silicon p-n structures irradiated with gamma-ray quanta
O. K. Baranovskii, P. V. Kuchinskii, V. M. Lutkovskii, A. P. Petrunin, E. D. Savenok
Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing
L. V. Asryan, R. A. Suris
Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs
I. P. Soshnikov, O. M. Gorbenko, A. O. Golubok, N. N. Ledentsov
Electrical and photoelectric properties of a-Si:H layered films: The influence of thermal annealing
I. A. Kurova, N. N. Ormont, E. I. Terukov, I. N. Trapeznikova, V. P. Afanas’ev, A. S. Gudovskikh
Optically pumped mid-infrared InGaAs(Sb) LEDs
N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov
Current-tunable lasers with a narrow emission line operating at 3.3 µm
A. N. Imenkov, N. M. Kolchanova, P. Kubat, K. D. Moiseev, C. Civiš, Yu. P. Yakovlev
Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers
D. A. Livshits, A. Yu. Egorov, I. V. Kochnev, V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov, T. A. Nalyot, I. S. Tarasov