Ausgabe 6/2018
Inhalt (24 Artikel)
AC Electrical Conductivity of FeIn2Se4 Single Crystals
N. N. Niftiyev, F. M. Mammadov, V. I. Quseynov, S. Sh. Kurbanov
Contribution of Iron Clusters to the Magnetic Properties of Pb1 – yFe y Te Alloys
E. P. Skipetrov, A. A. Solovev, V. E. Slynko
Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures
N. A. Poklonski, S. A. Vyrko, A. N. Dzeraviaha
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCd x Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
V. S. Evstigneev, V. S. Varavin, A. V. Chilyasov, V. G. Remesnik, A. N. Moiseev, B. S. Stepanov
On the Structure of the Mössbauer Spectra of 119mSn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of 119mTe/119Sb Isotopes
E. I. Terukov, A. V. Marchenko, P. P. Seregin, N. N. Zhukov
Rb1 – xCs x NO3 (x = 0.025, 0.05, 0.1) Single Crystals and Their High-Temperature X-Ray Study
A. F. Haziyeva, V. I. Nasirov, Y. G. Asadov, Y. I. Aliyev, S. H. Jabarov
Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations
V. A. Volodin, V. A. Sachkov, M. P. Sinyukov
Optical Properties of Multilayered Sol–Gel Zinc-Oxide Films
N. M. Denisov, E. B. Chubenko, V. P. Bondarenko, V. E. Borisenko
Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers
A. S. Pashchenko, L. S. Lunin, S. N. Chebotarev, M. L. Lunina
X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method
S. S. Pushkarev, M. M. Grekhov, N. V. Zenchenko
Quantum Oscillations of Photoconductivity Relaxation in p–i–n GaAs/InAs/AlAs Heterodiodes
Yu. N. Khanin, E. E. Vdovin
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers
A. V. Babichev, A. S. Kurochkin, E. C. Kolodeznyi, A. V. Filimonov, A. A. Usikova, V. N. Nevedomsky, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. Yu. Egorov
Study of the Properties of II–VI and III–V Semiconductor Quantum Dots
A. I. Mikhailov, V. F. Kabanov, I. A. Gorbachev, E. G. Glukhovsky
Properties of Lead-Sulfide Nanoparticles in a Multicrystalline Structure
N. D. Zhukov, A. G. Rokakh, M. I. Shishkin
Effect of the Dehydrogenation of Graphane on Its Mechanical and Electronic Properties
L. A. Openov, A. I. Podlivaev
On the Possibility of the Propagation of Solitary Electromagnetic Waves in Bigraphene
E. I. Kukhar, S. V. Kryuchkov, E. S. Ionkina
High-Sensitivity Photodetector Based on Atomically Thin MoS2
S. D. Lavrov, A. P. Shestakova, E. D. Mishina, Yu. R. Efimenkov, A. S. Sigov
Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal
I. O. Maiboroda, J. V. Grishchenko, I. S. Ezubchenko, I. S. Sokolov, I. A. Chernych, A. A. Andreev, M. L. Zanaveskin
Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate
O. V. Aleksandrov, S. A. Mokrushina
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
T. V. Malin, D. S. Milakhin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhuhov, V. V. Ratnikov, A. N. Smirnov, V. Yu. Davydov, K. S. Zhuravlev
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers
M. M. Ivanova, A. N. Kachemtsev, A. N. Mikhaylov, D. O. Filatov, A. P. Gorshkov, N. S. Volkova, V. Yu. Chalkov, V. G. Shengurov
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution
I. P. Kalinkin, S. A. Kukushkin, A. V. Osipov
Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation
S. A. Yakovlev, A. V. Ankudinov, Yu. V. Vorobyov, M. M. Voronov, S. A. Kozyukhin, B. T. Melekh, A. B. Pevtsov
Variation in the Conductivity of Polyaniline Nanotubes During Their Formation
V. M. Kapralova, I. Yu. Sapurina, N. T. Sudar’