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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 15/2018

05.06.2018

Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient

verfasst von: Zhen Ce Lei, Nor Ishida Zainal Abidin, Yew Hoong Wong

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 15/2018

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Abstract

The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO2 was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO2 has been proposed and explicated.
Vorheriger Artikel Optimizing the thermal annealing temperature: technological route for tuning the photo-detecting property of p-CuO thin films grown by chemical bath deposition method
Nächster Artikel Solution volume effect on structural, optical and photovoltaic properties of nebulizer spray deposited SnS thin films

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Metadaten
Titel
Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient
verfasst von
Zhen Ce Lei
Nor Ishida Zainal Abidin
Yew Hoong Wong
Publikationsdatum
05.06.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 15/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9408-2

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