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Erschienen in:
2018 | OriginalPaper | Buchkapitel
Study of Effect of Strain, Quantum Well Width, and Temperature on Optical Gain in Nano-Heterostructures
verfasst von : Swati Jha, Ashok Sihag
Erschienen in: Silicon Photonics & High Performance Computing
Verlag: Springer Singapore
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Abstract
In the work discussed here, we evaluate the effect of change in strain, quantum well width variation, and temperature on the optical gain of two SQW (Single quantum well) nano-heterostructures. Both the heterostructures are SCH (Separate confinement heterostructures) with STIN (Step Index) profile. We have taken a quaternary semiconductor Al0.15In0.22Ga0.63As/GaAs and compared it with a ternary semiconductor heterostructure In0.45Ga0.55As/InP. This paper is an effort to compare the effect of change of strain on the optical gain of the two heterostructures. It also analyzes the behavior of quantum well width and temperature on the gain.