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Erschienen in: Journal of Sol-Gel Science and Technology 1/2013

01.07.2013 | Original Paper

Synthesis and characterization of tellurium-doped CdO nanoparticles thin films by sol–gel method

verfasst von: S. Sönmezoğlu, T. A. Termeli, S. Akın, İ. Askeroğlu

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 1/2013

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Abstract

In this work, tellurium (Te) doped CdO nanoparticles thin films with different Te concentrations (1, 3, 5, 7 and 10 %) were prepared by sol–gel method. The effects of Te doping on the structural, morphological and optical properties of the CdO thin films were systematically studied. From X-ray diffraction spectra, it has seen that all of thin films were formed polycrystalline and cubic structure having (111), (200) and (311) orientations. The structure of CdO thin films with Te-dopant was formed the unstable CdTeO3 monoclinic structure crystal plane (\( {\bar{\text{1}}\text{22}} \)), however, the intensity of this unstable peak of the crystalline phase decreased with the increase of Te-doping ratio. The strain in the structure is also studied by using Williamson-Hall method. From FE-SEM images, it has seen that particles have homogeneously distributed and well hold onto the substrate surface. Additionally, grain size increases from 27 to 121 nm with the increase of Te-doping ratio. Optical results indicate that 1 % Te-doped CdO thin film has the maximum transmittance of about 87 %, and the values of optical energy band gap increases from 2.50 to 2.64 eV with the increase of Te-doping ratio. These results make Te-doped CdO thin films an attractive candidate for thin film material applications.

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Metadaten
Titel
Synthesis and characterization of tellurium-doped CdO nanoparticles thin films by sol–gel method
verfasst von
S. Sönmezoğlu
T. A. Termeli
S. Akın
İ. Askeroğlu
Publikationsdatum
01.07.2013
Verlag
Springer US
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 1/2013
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-013-3054-1

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