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Erschienen in: Journal of Materials Science: Materials in Electronics 20/2018

22.08.2018

Systematic study of electronic properties of Fe-doped TiO2 nanoparticles by X-ray photoemission spectroscopy

verfasst von: Naglaa H. S. Nasralla, Mahboubeh Yeganeh, Yayuk Astuti, Sunthon Piticharoenphun, Lidija Šiller

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 20/2018

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Abstract

The importance of investigating the electronic structure of Fe doped TiO2 nanoparticles lies in understanding their various magnetic and optical applications. In this study Fe doped TiO2 nanoparticles were synthesized by sol–gel method in a wide range of Fe/Ti molar ratios (1, 3, 5, 8, and 10%) and post annealing at 400, 600 and 800 °C in air. The structure and size of nanoparticles were studied by X-ray diffraction and transmission electron microscopy, respectively. Systematic study of the existing states of Fe ions in Fe doped TiO2 and transformation of the existing states as a function of annealing temperature and Fe concentration were carried out utilizing high-resolution X-ray photoemission spectroscopy (XPS). The XPS results showed that Fe was present in all samples while Fe ions were detected in mixed valence (Fe2+ and Fe3+) states. The Fe3+ ions were dominant in the surface region of the nanoparticles. Moreover, the Ti in Fe:TiO2 nanoparticles was assigned to the Ti4+ while a small shift towards lower binding energies was observed upon increasing the annealing temperature and dopant level. This confirms the successful incorporation of Fe into TiO2, and the shifts in binding energies were attributed to the anatase to rutile transformation. The results verify that doping by Fe up to 10% do not exceed the limit of Fe substitutation into TiO2 lattice.

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Metadaten
Titel
Systematic study of electronic properties of Fe-doped TiO2 nanoparticles by X-ray photoemission spectroscopy
verfasst von
Naglaa H. S. Nasralla
Mahboubeh Yeganeh
Yayuk Astuti
Sunthon Piticharoenphun
Lidija Šiller
Publikationsdatum
22.08.2018
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 20/2018
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-018-9911-5

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