Temperature dependence of characteristic parameters of the Au/C₂₀H₁₂/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

Au/C₂₀H₁₂/n-Si SBD was fabricated and its characteristic parameters such as reverse-saturation current (I_o), ideality factor (n), zero-bias barrier height (Φ_bo), series and shunt resistances (R_s, R_sh) were found as 1.974 × 10⁻⁷ A, 6.434, 0.351 eV, 30.22 Ω and 18.96 kΩ at 160 K and 1.061 × 10⁻⁶ A, 2.34, 0.836 eV, 5.82 Ω and 24.52 kΩ at 380 K, respectively. While the value of n decreases with increasing temperature, Φ_bo increases. The change in Φ_bo with temperature is not agreement with negative temperature coefficient of forbidden band-gap of semiconductor (Si). Thus, Φ _bo versus n, Φ _bo and (n⁻¹ − 1) versus q/2kT plots were drawn to obtain an evidence of a Gaussian distribution (GD) of the BHs and all of them have a straight line. The mean value of BH (\( \overline{\varPhi }_{bo} \)) was found as 0.983 eV from the intercept of Φ _bo versus n plot (for n = 1). Also, the value of \( \overline{\varPhi }_{bo} \) and standard deviation (σ_s) were found as 1.123 eV and 0.151 V from the slope and intercept of Φ_bo versus q/2kT plot. By using the modified Richardson plot, the \( \overline{\varPhi }_{bo} \) and Richardson constant (A*) values were obtained as 1.116 eV and 113.44 A cm⁻² K⁻² from the slope and intercept of this plot, respectively. It is clear that this value of A* (=113.44 A cm⁻² K⁻²) is very close to their theoretical value of 112 A cm⁻² K⁻² for n-Si. In addition, the energy density distribution profile of surface states (D_it) was obtained from the forward bias I–V data by taking into account the bias dependent of the effective barrier height (Φ _e ) and ideality factor n(V) for four different temperatures (160, 200, 300, and 380 K). In conclusion, the I–V–T measurements of the Au/C₂₀H₁₂/n-Si SBD in the whole temperature range can be successfully explained on the basis of thermionic emission (TE) theory with GD of the BHs.