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Journal of Electronic Materials
Erschienen in: Journal of Electronic Materials 9/2021

14.06.2021 | Original Research Article

Theoretical Insights on Bandgap Engineering for Nanoribbons of the 2D Materials Family with Co-Adatoms

verfasst von: Keyur Sangani, Ankur Pandya, Prafulla K. Jha

Erschienen in: Journal of Electronic Materials | Ausgabe 9/2021

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Abstract

The bandgap tuning of two-dimensional (2D) materials is a vital step for their potential applications in the realm of nanoelectronics, optoelectronics, and spintronics. In this context, the bandgap of cobalt (Co)-adsorbed nanoribbons of novel 2D materials (for instance, graphene (GNR), h-BN (BNNR), silicene (SiNR), germanene (GeNR), stanene (SnNR), and phosphorene (PNR)) is investigated under the effect of a transverse magnetic field via an acoustical deformation potential (ADP) scattering mechanism. Bandgaps ranging from 1.10 eV to 1.42 eV were obtained for Co-adsorbed 2D nanoribbons, which display semiconducting behaviour. In addition to that, investigating the impact of temperature on the bandgap revealed an anomalous temperature dependence of the bandgap. The outcomes of the present work would be advantageous for developing transition metal (TM)-adsorbed-nanoribbon-based nanoelectronic and spintronic devices, wherein controlling their bandgap by employing a magnetic field is a useful tool for advancing nanoribbon-based technology.
Vorheriger Artikel Improved Gas Sensors Based on Nano-Textured Silicon Substrates
Nächster Artikel Elaboration and Characterization of Ni (NPs)-PANI Hybrid Material by Electrodeposition for Non-Enzymatic Glucose Sensing

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Metadaten
Titel
Theoretical Insights on Bandgap Engineering for Nanoribbons of the 2D Materials Family with Co-Adatoms
verfasst von
Keyur Sangani
Ankur Pandya
Prafulla K. Jha
Publikationsdatum
14.06.2021
Verlag
Springer US
Erschienen in
Journal of Electronic Materials / Ausgabe 9/2021
Print ISSN: 0361-5235
Elektronische ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-021-09039-8

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