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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 5/2020

03.02.2020

Turning free-standing three-dimensional graphene into electrochemically active by nitrogen doping during chemical vapor deposition process

verfasst von: Yuxiao Ma, Xueke Wu, Mei Yu, Songmei Li, Jianhua Liu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2020

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Abstract

By chemical vapor deposition on nanometer-size copper nanopowder sinter template with ammonia as nitrogen source, a free-standing N-doped three-dimensional graphene (N3DG) with macro–meso–micro-hierarchical porous structure was prepared. The existence of nitrogen-containing groups in N3DG turned inert graphene into electrochemically active. The flow ratio between methane and ammonia significantly influences the chemical environment of as-doped nitrogen atoms, the structure of defects in graphene, as well as the electrochemical performance. With the flow ratio between methane and ammonia of 1:4, the specific capacitance of N3DG could be as high as 558.9 F g− 1. The areal capacitance is 4.26 F m− 2.
Vorheriger Artikel A blue to green tunable Ba3GdP3O12:Tb3+ nanophosphor: structural and opto-electronic analysis
Nächster Artikel Investigation on the synthesis, characterization, and optimization of ternary BaLa0.4Ce0.1Fe11.5O19/ATP/PANI composites as microwave absorption material

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Metadaten
Titel
Turning free-standing three-dimensional graphene into electrochemically active by nitrogen doping during chemical vapor deposition process
verfasst von
Yuxiao Ma
Xueke Wu
Mei Yu
Songmei Li
Jianhua Liu
Publikationsdatum
03.02.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 5/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02740-9

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