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Journal of Materials Science
Erschienen in: Journal of Materials Science 19/2019

20.06.2019 | Electronic materials

Analysis on the electronic trap of β-Ga2O3 single crystal

Erschienen in: Journal of Materials Science | Ausgabe 19/2019

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Abstract

X-ray photoelectron spectroscopy (XPS), photoluminescence spectroscopy and Raman spectroscopy were applied to study β-Ga2O3 single crystals before and after annealing. By systematic analysis, the mechanism of the carrier concentration decrease after annealing was explained using electronic trap of Ga I 3+ . XPS measurements showed that the O content increases while the Ga3+ content decreases after annealing, which is related to the carrier concentration decrease. The shift of blue emission band center which related to donors was attributed to the electron capture by Ga3+ nearby conduction band. The Raman spectra confirmed this capture, as based on the Raman peak intensity changes, and the electrons were judged to be mainly captured by GaI of β-Ga2O3.
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Metadaten
Titel
Analysis on the electronic trap of β-Ga2O3 single crystal
Publikationsdatum
20.06.2019
Erschienen in
Journal of Materials Science / Ausgabe 19/2019
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-019-03777-1

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