Anzeige
Erschienen in:
01.05.2011
Capacitance–voltage characteristics of Pt/Bi2VO5.5/p-Si structures
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 5/2011
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Ferroelectric Bi2VO5.5 thin films were fabricated on p-type (100) Si substrates by sol–gel method and then annealed at different temperatures. The microstructures and surface morphologies of the Bi2VO5.5 thin films were examined by X-ray diffraction and atomic force microscope, respectively. The results indicate that the Bi2VO5.5 thin films show high c-axis preferred orientation and are compatible well with p-type Si substrates. The capacitance–voltage characteristics of Pt/Bi2VO5.5/Si capacitors measured at 1 MHz shows a clockwise hysteresis loop. The memory window of the hysteresis loop is 0.42 V with the gate voltage from −4 to 4 V. It is found that the memory window may be determined by the competition between ferroelectric polarization and charge injection.